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Datasheet: ZHCS500TA (Zetex Semiconductors)

High Current Schottky Diode

 

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Zetex Semiconductors
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1- September 1997
7
FEATURES:
Low V
F
High Current Capability
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
PARTMARK DETAIL: ZS5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
40
V
Forward Current (Continuous)
I
F
500
mA
Forward Voltage @ I
F
= 500mA
V
F
550
mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1000
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
6.75
3
A
A
Power Dissipation at T
amb
= 25 C
P
tot
330
mW
Storage Temperature Range
T
stg
-55 to + 150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
= 200
A
Forward Voltage
V
F
270
300
370
465
550
640
810
440
300
350
460
550
670
780
1050
mV
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
I
F
= 500mA, T
amb
= 100 C*
Reverse Current
I
R
15
40
A
V
R
= 30V
Diode Capacitance
C
D
20
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
10
ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
s; duty cycle
2% .
ZHCS500
1
3
C
1
A
3
2
SOT23
0
1
10
100
0
0
0
V
F
- Forward Voltage (V)
I
F
v
V
F
1m
I
F
-

F
o
rward C
urrent (A)
I
F
(av
)
- A
v
g

Fwd Cur (
A
)
0
T
C
- Case Temperature (C)
I
F(av)
v T
C
T
a
- A
m
b
ient
T
e
m
p
(C)
125
65
V
R
- Reverse Voltage (V)
T
a
v V
R
I
R
-
Rever
se Current (
A
)
1n
V
R
- Reverse Voltage (V)
I
R
v V
R
P
F
(av
)
- A
vg Pwr Diss

(W)
0
I
F(av)
- Avg Fwd Curr (A)
P
F(av)
v I
F(av)
C
D
- D
i
ode
C
apacitance
(pF)
90
0
VR - Reverse Voltage (V)
C
D
v V
R
-55C
+25C
DC
D=0.5
95
p
t
1
t
1
D=t
/t
p
I
F(pk)
I
F(av)
=DxI
F(pk)
Tj=125C
F(av)
P
F(av)
=I
xV
F
P
I
t
1
F(pk)
=DxI
F(av)
=I
F(av)
F(av)
F
xV
F(pk)
p
t
/t
D=t
1
I
p
D=0.2
D=0.05
Rth=100 C/W
Rth=200C/W
Rth=300C/W
50
0.6
0.2
0.4
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
0.5
0.6
10m
100m
1
0.1
0.2
0.3
0.4
0.5
10n
100n
1u
10u
100u
1m
10m
100m
10
20
30
40
+125C
+125C
+100C
+50C
+25C
-55C
DC
DC=0.5
DC=0.2
DC=0.1
DC=0.05
10
20
30
40
100
105
110
115
120
125
D=0.1
ZHCS500
TYPICAL CHARACTERISTICS
ZHCS500
TYPICAL CHARACTERISTICS
Pulse Width (s)
R
THj-a (
C/W
)
0
100u
t
p
p
1
1
/t
D=t
t
1m
10m
100m
1
10
100
100
200
300
Single Pulse
D=0.2
D=0.1
D=0.05
D=0.5
D=1
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