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Datasheet: ZHCS1000TA (Zetex Semiconductors)

High Current Schottky Diode

 

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Zetex Semiconductors
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 2 - OCTOBER 1997
7
FEATURES:
High current capability
Low V
F
APPLICATIONS:
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
PARTMARKING DETAILS : ZS1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
40
V
Forward Current
I
F
1000
mA
Forward Voltage @ I
F
= 1000mA(typ)
V
F
425
mV
Average Peak Forward Current;D.C.= 50%
I
FAV
1750
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
12
5.2
A
A
Power Dissipation at T
amb
= 25 C
P
tot
500
mW
Storage Temperature Range
T
stg
-55 to + 150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
= 300
A
Forward Voltage
V
F
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
--
mV
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
I
F
= 1000mA,T
a
= 100 C
*
Reverse Current
I
R
50
100
A
V
R
= 30V
Diode Capacitance
C
D
25
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
12
ns
switched from
I
F
= 500mA to I
R
=
500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
s. Duty cycle
2%
ZHCS1000
1
3
C
1
A
3
2
SOT23
0
75
125
1
10
100
0
30
0
0
30
VF - Forward Voltage (V)
I
F
v V
F
1m
IF -

Forward C
urrent
(A)
IF(av)

-
A
vg Fwd Cur (A)
0
TC - Case Temperature (C)
I
F(av)
v T
C
T
a
- Am
b
i
ent
T
e
m
p
(C
)
125
75
VR - Reverse Voltage (V)
T
a
v V
R
+50 C
+25C
I
R

- Reverse C
urrent
(
A
)
+100C
10n
VR - Reverse Voltage (V)
I
R
v V
R
PF(av
)
-
A
vg Pwr D
i
ss

(W)
0
IF(av) - Avg Fwd Curr (A)
P
F(av)
v I
F(av)
CD
- D
i
ode Capaci
t
a
nce

(pF)
200
100
0
VR - Reverse Voltage (V)
C
D
v V
R
Rth=100 C/W
-55C
+125C
10
20
+25C
+125C
10
20
-55 C
85
95
105
115
DC
D=0.5
D=0.2
D=0.1
D=0.05
DC
D=0.5
D=0.2
D=0.1
D=0.05
Rth=200 C/W
Rth=300 C/W
100
100n
1u
10u
100u
1m
10m
100m
Typical
Typical
Tj=125C
Typical
0.1
0.2
0.3
0.4
0.5
0.6
10m
100m
1
10
0.4
0.8
1.2
0.2
0.4
0.6
0.2
0.4
0.6
0.8
F(av)
P
F(av)
=I
x
V
F
p
t
1
t
1
D=t /t
p
I
F(pk)
I
F(av)
=D x
I
F(pk)
p
t
1
t
1
D=t /t
p
I
F(pk)
I
F(av)
=D x I
F(pk)
ZHCS1000
TYPICAL CHARACTERISTICS
ZHCS1000
TYPICAL CHARACTERISTICS
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE
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