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Datasheet: ZDT749 (Zetex Semiconductors)

Dual Pnp Medium Power Transistors

 

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Zetex Semiconductors
SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT749
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
3 - 351
SM-8
(8 LEAD SOT223)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-35
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cutoff
Current
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100C
Emitter Cutoff Current I
EBO
-0.1
A
V
EB
=-4V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.23
-0.3
-0.5
V
V
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
160
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
55
100
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT749
ZDT749
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
- (
V
o
l
t
s)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Gai
n
V
- (
V
o
l
t
s)
V
- (
V
o
l
t
s)
40
80
120
160
200
Switching Speeds
I
C
-
Collector Current (Amps)
Sw
i
tc
h
i
n
g
ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.001
1
0.01
0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V
CE
=2V
I
C
/I
B
=10
V
CE
=2V
V
CE
=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
I
C
/I
B
=100
I
C
/I
B
=10
0.001
1
0.01
0.1
10
I
C
/I
B
=100
0.001
1
0.01
0.1
10
0
1.2
1.6
1.8
1.4
0.001
1
0.01
0.1
10
10
3 - 353
3 - 352
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-35
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cutoff
Current
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100C
Emitter Cutoff Current I
EBO
-0.1
A
V
EB
=-4V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.23
-0.3
-0.5
V
V
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
160
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
55
100
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT749
ZDT749
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
- (
V
o
l
t
s)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Gai
n
V
- (
V
o
l
t
s)
V
- (
V
o
l
t
s)
40
80
120
160
200
Switching Speeds
I
C
-
Collector Current (Amps)
Sw
i
tc
h
i
n
g
ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.001
1
0.01
0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V
CE
=2V
I
C
/I
B
=10
V
CE
=2V
V
CE
=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
I
C
/I
B
=100
I
C
/I
B
=10
0.001
1
0.01
0.1
10
I
C
/I
B
=100
0.001
1
0.01
0.1
10
0
1.2
1.6
1.8
1.4
0.001
1
0.01
0.1
10
10
3 - 353
3 - 352
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