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Datasheet: ZDT6790 (Zetex Semiconductors)

Complementary Medium Power High Gain Transistors

 

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Zetex Semiconductors
SM-8 COMPLEMENTARY MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T6790
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
V
CBO
45
-50
V
Collector-Emitter Voltage
V
CEO
45
-40
V
Emitter-Base Voltage
V
EBO
5
-5
V
Peak Pulse Current
I
CM
6
-6
A
Continuous Collector Current
I
C
2
-2
A
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6790
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
NPN
PNP
3 - 381
SM-8
(8 LEAD SOT223)
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
45
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.1
A
V
CB
=35V
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.1
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
33
1300
ns
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FZT690 datasheet.
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cutoff Current
I
CBO
-0.1
A
V
CB
=-30V
Emitter Cutoff Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.25
-0.45
-0.75
V
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
V
I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
150
800
I
C
=-10mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
24
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
600
ns
I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FZT790 datasheet.
ZDT6790
ZDT6790
3 - 382
3 - 383
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
45
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.1
A
V
CB
=35V
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.1
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
33
1300
ns
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FZT690 datasheet.
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cutoff Current
I
CBO
-0.1
A
V
CB
=-30V
Emitter Cutoff Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.25
-0.45
-0.75
V
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
V
I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
150
800
I
C
=-10mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
24
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
600
ns
I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FZT790 datasheet.
ZDT6790
ZDT6790
3 - 382
3 - 383
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