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Datasheet: ZDT6702 (Zetex Semiconductors)

Complementary Medium Power Darlington Transistors

 

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Zetex Semiconductors
SM-8 COMPLEMENTARY MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 February 1997
PARTMARKING DETAIL T6702
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
V
CBO
80
-80
V
Collector-Emitter Voltage
V
CEO
60
-60
V
Emitter-Base Voltage
V
EBO
10
-10
V
Peak Pulse Current
I
CM
4
-4
A
Continuous Collector Current
I
C
1.75
-1.75
A
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6702
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
NPN
PNP
SM-8
(8 LEAD SOT223)
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
200
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60
100
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
15
V
I
E
=100
A
Collector Cutoff
Current
I
CBO
0.5
10
10
nA
A
V
CB
=60V
V
CB
=60V,
T
amb
=100C
Emitter Cutoff Current I
EBO
0.1
10
nA
V
EB
=8V
Colllector-Emitter
Cutoff Current
I
CES
50
500
nA
V
CE
=60V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.83
1.0
0.95
1.28
V
V
I
C
=0.5A, I
B
=0.5mA*
I
C
=1.75A, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.68
1.85
V
I
C
=1.75A, I
B
=2mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.55
1.75
V
I
C
=1.75A, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
5K
5K
3.5K
0.5K
13K
13K
9K
2K
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=4A, V
CE
=5V*
Transition Frequency
f
T
140
MHz
I
C
=100mA, V
CE
=10V
f=100MHz
Input Capacitance
C
ibo
70
pF
V
EB
=500mV, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
0.5
s
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
2.1
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT6702
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80
-120
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-60
-90
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10
-15
V
I
E
=-100
A
Collector Cutoff
Current
I
CBO
-0.5
-10
-10
nA
A
V
CB
=-60V
V
CB
=-60V,
T
amb
=100C
Emitter Cutoff Current I
EBO
-0.1
-10
nA
V
EB
=-8V
Collector-Emitter
Cutoff Current
I
CES
-50
-500
nA
V
CE
=-60V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.86
-1.05
-1.0
-1.28
V
V
I
C
=-0.5A, I
B
=-0.5mA*
I
C
=-1.75A, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.7
-1.9
V
I
C
=-1.75A, I
B
=-2mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.55
-1.85
V
I
C
=-1.75A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
2K
2K
1.5K
1K
8K
8K
7K
4K
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-4A, V
CE
=-5V*
Transition Frequency
f
T
140
MHz
I
C
=-100mA, V
CE
=-10V
f=100MHz
Input Capacitance
C
ibo
90
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
25
pF
V
CE
=-10V, f=1MHz
Switching Times
t
on
0.75
s
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
t
off
1.2
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT6702
ZDT6702
1m
100m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
IC/IB=1000
IC/IB=500
+25C
+85C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25C
+85C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+85C
+150C
+25C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
DC
10m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
+150C
VCE=5V
+25C
VCE=5V
IC/IB=1000
0.2
0.4
0.6
0.8
1.0
1.2
IC/IB=1000
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
-55C
1m
10m
100m
1
10
100m
1m
10m
100m
1
10
10m
1m
10
1
-55C
4K
8K
12K
16K
20K
-55C
+85C
+25C
+150C
0.4
0.8
1.6
2.0
1.2
-55C
0.8
0.4
1.2
1.6
2.0
1
10
100
100m
1
10
TYPICAL CHARACTERISTICS (NPN TRANSISTOR)
1m
10m
100m
1
10
ZDT6702
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
IC/IB=1000
IC/IB=500
0
I
C
- Collector Current (A)
h
FE
v I
C
0
IC - Collector Current (A)
V
BE(on)
v I
C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
DC
10m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
VCE=5V
+25C
IC/IB=1000
0.2
0.4
0.6
0.8
1.0
1.2
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
1m
10m
100m
1
10
+85 C
+25C
IC/IB=1000
-55C
+150 C
-55 C
+25C
+85C
+150C
0.4
0.8
1.2
1.6
2.0
1m
10m
100m
1
10
1m
10m
100m
10
1
0.4
0.8
1.2
1.6
2.0
1m
10m
100m
1
10
100m
10k
20k
5k
15k
VCE=5V
+85C
+25C
-55C
-55 C
+25 C
+85 C
+150 C
100m
1
10
1
10
100
TYPICAL CHARACTERISTICS (PNP TRANSISTOR)
ZDT6702
100us
Pulse Width
Transient Thermal Resistance
(single device)
0
D= 0.2
D= 0.1
D= 0.05
D= 0.5
Single Pulse
D= t1
tP
t1
tP
1ms 10ms 100ms 1s
10s
100s
Derating curve
(single device)
0
0
T - Ambient Temperature ( C)
D = 1
10
20
30
40
50
20
40
60
80 100 120 140 160
1
2
3
4
10
Rs = o/c
Rs = 1Mohm
0
VCE - Collector Emitter Voltage (V)
Voltage Derating
100
0.50
1.00
1.50
2.00
10
Rs = o/c
0
VCE - Collector Emitter Voltage (V)
Voltage Derating
100
0.50
1.00
1.50
2.00
OTHER CHARACTERISTICS
ZDT6702
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 1997
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Internet:
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of
any product or service.
He
E
D
b
e1
Lp
45
o
3
c
1
2
3
4
8
7
6
5
e2
A
A1
Dim
Millimetres
Inches
Min
Typ
Max
Min
Typ
Max
A
1.7
0.067
A1
0.02
0.1
0.0008
0.004
b
0.7
0.028
c
0.24
0.32
0.009
0.013
D
6.3
6.7
0.248
0.264
E
3.3
3.7
0.130
0.145
e1
4.59
0.180
e2
1.53
0.060
He
6.7
7.3
0.264
0.287
Lp
0.9
0.035
15
15
10
10
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