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Datasheet: ZC836A (Zetex Semiconductors)

SOT23 SILICON VARIABLE CAPACITANCE DIODES

 

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Zetex Semiconductors
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 JANUARY 1998
FEATURES
*
Close Tolerance C-V Characteristics
*
High Tuning Ratio
*
Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
MAX
UNIT
Forward Current
I
F
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
=25C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Reverse Breakdown
Voltage
V
BR
25
V
I
R
=10
A
Reverse Voltage Leakage
I
R
0.2
10
nA
V
R
=20V
Temperature Coefficient
of Capacitance
0.03
0.04
%/C
V
R
=3V, f=1MHz
TUNING CHARACTERISTICS (at T
amb
=25C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
Minimum
Q
@ V
R
=3V
f=50MHz
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
NOM
MAX
MIN
MAX
ZC830A
9.0
10.0
11.0
300
4.5
6.0
ZC831A
13.5
15.0
16.5
300
4.5
6.0
ZC832A
19.8
22.0
24.2
200
5.0
6.5
ZC833A
29.7
33.0
36.3
200
5.0
6.5
ZC834A
42.3
47.0
51.7
200
5.0
6.5
ZC835A
61.2
68.0
74.8
100
5.0
6.5
ZC836A
90.0
100.0
110.0
100
5.0
6.5
Note:
No suffix
20% (e.g. ZC830), suffix B
5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
ZC830/A/B
to
ZC836/A/B
1
3
2
SOT23
1
3
ZC830/A/B
to
ZC836/A/B
PARTMARKING DETAILS
PART NO
PARTMARK
PART NO
PARTMARK
PART NO
PARTMARK
ZC830
J1S
ZC830A
J1A
ZC830B
J1B
ZC831
J3S
ZC831A
J3A
ZC831B
J3B
ZC832
J4S
ZC832A
J4A
ZC832B
J4B
ZC833
J2S
ZC833A
J2A
ZC833B
J2B
ZC834
J5S
ZC834A
J5A
ZC834B
J5B
ZC835
J6S
ZC835A
J6A
ZC835B
J6B
ZC836
J7S
ZC836A
J7A
ZC836B
J7B
1
10
100
1
10
100
200
836A
835A
834A
833A
832A
831A
830A

D
i
o
d
e
Ca
pa
c
i
t
a
nc
e (
p
F
)
Diode Capacitance
Reverse Voltage (Volts)
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