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Datasheet: ZC2813E (Zetex Semiconductors)

DUAL SCHOTTKY BARRIER DIODES

 

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Zetex Semiconductors
SOT23 DUAL SCHOTTKY
BARRIER DIODES
ISSUE 3 - NOVEMBER 1995
7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT
CONDITIONS.
Breakdown Voltage
V
BR
15
V
I
R
=10
A
Reverse Leakage Current
I
R
100
nA
V
R
=10V
Forward Voltage
V
F
410
mV
I
F
=1mA
Forward Current
I
F
20
mA
V
F
=1V
Capacitance
C
T
1.2
pF
V
R
=0 V, f=1MHz
Effective Minority Lifetime (1)
100
ps
f= 54 MHz, I
pk
=20mA
(1) Sample Test.
For typical characteristics graphs see ZC2811E datasheet.
ZC2812E
ZC2813E
1
3
2
SOT23
1
3
2
1
2
3
ZC2813E
ZC2812E
Device
Common Anode
Series
Type
13E
12E
Part Marking
3 - 315
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