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Datasheet: ZC2800 (Zetex Semiconductors)

Schottky Barrier Diodes

 

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Zetex Semiconductors
SOT23 SCHOTTKY BARRIER DIODES
ISSUE 2 MARCH 1995
7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
TYPE
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
ZC2800E
ZC2811E
ZC5800E
V
BR
70
15
50
V
V
V
I
R
=10
A
Reverse Leakage
Current
ZC2800E
ZC2811E
ZC5800E
I
R
200
100
200
nA
nA
nA
V
R
=50V
V
R
=10V
V
R
=35V
Forward Voltage
ZC2800E
ZC2811E
ZC5800E
V
F
410
410
410
mV
mV
mV
I
F
=1mA
Forward Current
ZC2800E
ZC2811E
ZC5800E
I
F
15
20
15
mA
mA
mA
V
F
=1V
Capacitance
ZC2800E
ZC2811E
ZC5800E
C
T
2.0
1.2
2.0
pF
pF
pF
V
R
=0 V, f=1MHz
Effective Minority
Lifetime (1)
ZC2800E
ZC2811E
ZC5800E
100
100
100
ps
ps
ps
f= 54 MHz
I
pk
= 20mA
(1) Sample Test.
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
DIODE PIN CONNECTION
PARTMARKING DETAIL
ZC2800E E6
ZC2811E E8
ZC5800E E9
0.8
50
100
150
200
0.8
0.6
0.4
0.2
0
Temperature (C)
(ZC2811E)
Reverse Voltage (V)
50
100
150
200
0.8
0.6
0.4
0.2
0
Temperature (C)
(ZC2800E & ZC5800E)
TYPICAL CHARACTERISTICS
(ZC2811E)
(ZC2800E & ZC5800E)
Reverse Voltage (V)
I
F
=10mA
I
F
=1.0mA
I
F
=0.1mA
I
F
=0.01mA
I
F
=10mA
I
F
=1.0mA
I
F
=0.1mA
I
F
=0.01mA
1.4
1.2
0.2
1.0
0.6
0.4
0.8
1.4
1.2
0.2
1.0
0.6
0.4
10
0
20
30
40
50
2
0
4
6
8
10
1
3
2
SOT23
!
3 - 313
3 - 314
SOT23 SCHOTTKY BARRIER DIODES
ISSUE 2 MARCH 1995
7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
TYPE
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
ZC2800E
ZC2811E
ZC5800E
V
BR
70
15
50
V
V
V
I
R
=10
A
Reverse Leakage
Current
ZC2800E
ZC2811E
ZC5800E
I
R
200
100
200
nA
nA
nA
V
R
=50V
V
R
=10V
V
R
=35V
Forward Voltage
ZC2800E
ZC2811E
ZC5800E
V
F
410
410
410
mV
mV
mV
I
F
=1mA
Forward Current
ZC2800E
ZC2811E
ZC5800E
I
F
15
20
15
mA
mA
mA
V
F
=1V
Capacitance
ZC2800E
ZC2811E
ZC5800E
C
T
2.0
1.2
2.0
pF
pF
pF
V
R
=0 V, f=1MHz
Effective Minority
Lifetime (1)
ZC2800E
ZC2811E
ZC5800E
100
100
100
ps
ps
ps
f= 54 MHz
I
pk
= 20mA
(1) Sample Test.
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
DIODE PIN CONNECTION
PARTMARKING DETAIL
ZC2800E E6
ZC2811E E8
ZC5800E E9
0.8
50
100
150
200
0.8
0.6
0.4
0.2
0
Temperature (C)
(ZC2811E)
Reverse Voltage (V)
50
100
150
200
0.8
0.6
0.4
0.2
0
Temperature (C)
(ZC2800E & ZC5800E)
TYPICAL CHARACTERISTICS
(ZC2811E)
(ZC2800E & ZC5800E)
Reverse Voltage (V)
I
F
=10mA
I
F
=1.0mA
I
F
=0.1mA
I
F
=0.01mA
I
F
=10mA
I
F
=1.0mA
I
F
=0.1mA
I
F
=0.01mA
1.4
1.2
0.2
1.0
0.6
0.4
0.8
1.4
1.2
0.2
1.0
0.6
0.4
10
0
20
30
40
50
2
0
4
6
8
10
1
3
2
SOT23
!
3 - 313
3 - 314
ZC2800E
ZC2811E
ZC5800E
Ambient Temperature (C)
0
20
40
Revese Voltage (V)
0
100
1.0
0.1
0.01
Forward Voltage (V)
TYPICAL CHARACTERISTICS
(ZC2811E)
(ZC2800E & ZC5800E)
(ZC2811E)
(ZC2800E & ZC5800E)
(ZC2811E)
(ZC2800E & ZC5800E)
10
0
50
100
150
Ambient Temperature (C)
0
50
100
150
0.5
1.0
1.5
0
100
1.0
0.1
0.01
Forward Voltage (V)
10
0.5
1.0
1.5
60
80
0
5
10
15
20
10
A
100nA
10nA
1nA
1
A
10
A
100nA
10nA
1nA
1
A
10
A
100nA
10nA
1nA
1
A
10
A
100nA
10nA
1nA
1
A
T
amb
=150C
T
amb
=125C
T
amb
=100C
T
amb
=75C
T
amb
=50C
T
amb
=25C
T
amb
=150C
T
amb
=125C
T
amb
=100C
T
amb
=75C
T
amb
=50C
T
amb
=25C
Revese Voltage (V)
V
R
=50V
20V
10V
1V
V
R
=20V
10V
5V
1V
PAGE NUMBER
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