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Datasheet: VN10LFTA (Zetex Semiconductors)

N-channel MOSFET

 

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Zetex Semiconductors
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 JANUARY 1996
FEATURES
*
60 Volt V
DS
*
R
DS(on)
=5
PARTMARKING DETAIL
MY
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
= 25C
I
D
150
mA
Pulsed Drain Current
I
DM
3
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=100
A, V
GS
=0V
Gate-Source
Breakdown Voltage
V
GS(th)
0.8
2.5
V
I
D
=1mA, V
DS
= V
GS
Gate Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current (1)
I
DSS
10
A
V
DS
=60 V, V
GS
=0V
On State Drain
Current(1)
I
D(on)
750
mA
V
DS
=15 V, V
GS
=10V
Static Drain Source On
State Resistance (1)
R
DS(on)
5.0
7.5
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
Forward
Transconductance
(1)(2)
g
fs
100
mS
V
DS
=15V, I
D
=500mA
Input Capacitance (2)
C
iss
60
pF
Common Source
Output Capacitance (2)
C
oss
25
pF
V
DS
=25 V, V
GS
=0V
f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Time (2)(3)
t
(on)
3
10
ns
V
DD
15V, I
D
=600mA
Turn-Off Time (2)(3)
t
(off)
4
10
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
VN10LF
D
G
S
3 - 308
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