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Datasheet: PMMAD (Zetex Semiconductors)

STEERING DIODE (RAIL CLAMP) ARRAY

 

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Zetex Semiconductors
N-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ISSUE 2 MAY 94
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* Extremely low on state voltage
* No need to derate for higher temperatures
* Excellent temperature immunity
* High input impedance
* Reverse blocking characteristic which is
Independent of gate bias
* Low input capacitance
* Characterised for logic level drive
APPLICATIONS
* Fluorescent lamp driver
* Automotive load drivers
* High voltage DC-DC converters
* Darlington replacement
* Telecoms hook switch and earth recall switch
ABSOLUTE MAXIMUM RATINGS (at T
amb
=25C unless otherwise stated)
PARAMETER
SYMBOL
VALUE
UNIT
Forward Drain-Source Voltage
V
DS
450
V
Reverse Drain Source Voltage
V
SD
30
V
Continuous Drain Current
I
D
0.32
A
Practical Continuous Drain Current*
I
DP
0.37
A
Pulsed Drain Current
@ T
amb
=25C
@ T
amb
=125C
I
DMR
I
DM
2
1
A
A
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
0.6
W
Practical Power Dissipation*
P
DP
0.8
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +125
C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
E-Line
TO92 Compatible
3-112
D
G
S
ZCN0545A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Forward Drain-Source
Breakdown Voltage
BV
DSS
450
V
V
GS
=0V
Reverse Drain-Source
Breakdown Voltage (4)
BV
SD
30
V
I
D
=1mA
Gate-Source
Threshold Voltage
V
GS(th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
A
A
V
DS
=max. rating, V
GS
=0
V
DS
=0.8 x max. rating, V
GS
=0V,
T=125C
(2)
Drain Source
Saturation Voltage (1)
V
DS(SAT)
3
3
V
V
I
D
=500mA, V
GS
=10 V
I
D
=250mA, V
GS
=5 V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
6
V
GS
=10V,I
D
=0.5A
Input Capacitance (2)
C
iss
90
pF
Common Source
Output Capacitance (2)
C
oss
12
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
6
pF
Switching Times (2)(3) t
on
150
ns
V
DD
25V, V
GEN
=10V
I
D
=1A, R
GS
=50
t
off
200
300
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
ZCN0545A
0
25
50
75
100
125
0
0.2
0.4
0.6
0.8
100us
1ms
10ms
100ms
1s
10s
100s
0
40
80
120
160
Pulse Width
200
t
1
t
p
D= t
1
t
p
D=1 (DC)
D=0.5
D=0.2
D=0.1
SINGLE PULSE
Derating Curve
Transient Thermal Resistance
Temperature
3-113
N-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ISSUE 2 MAY 94
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* Extremely low on state voltage
* No need to derate for higher temperatures
* Excellent temperature immunity
* High input impedance
* Reverse blocking characteristic which is
Independent of gate bias
* Low input capacitance
* Characterised for logic level drive
APPLICATIONS
* Fluorescent lamp driver
* Automotive load drivers
* High voltage DC-DC converters
* Darlington replacement
* Telecoms hook switch and earth recall switch
ABSOLUTE MAXIMUM RATINGS (at T
amb
=25C unless otherwise stated)
PARAMETER
SYMBOL
VALUE
UNIT
Forward Drain-Source Voltage
V
DS
450
V
Reverse Drain Source Voltage
V
SD
30
V
Continuous Drain Current
I
D
0.32
A
Practical Continuous Drain Current*
I
DP
0.37
A
Pulsed Drain Current
@ T
amb
=25C
@ T
amb
=125C
I
DMR
I
DM
2
1
A
A
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
0.6
W
Practical Power Dissipation*
P
DP
0.8
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +125
C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
E-Line
TO92 Compatible
3-112
D
G
S
ZCN0545A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Forward Drain-Source
Breakdown Voltage
BV
DSS
450
V
V
GS
=0V
Reverse Drain-Source
Breakdown Voltage (4)
BV
SD
30
V
I
D
=1mA
Gate-Source
Threshold Voltage
V
GS(th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
A
A
V
DS
=max. rating, V
GS
=0
V
DS
=0.8 x max. rating, V
GS
=0V,
T=125C
(2)
Drain Source
Saturation Voltage (1)
V
DS(SAT)
3
3
V
V
I
D
=500mA, V
GS
=10 V
I
D
=250mA, V
GS
=5 V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
6
V
GS
=10V,I
D
=0.5A
Input Capacitance (2)
C
iss
90
pF
Common Source
Output Capacitance (2)
C
oss
12
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
6
pF
Switching Times (2)(3) t
on
150
ns
V
DD
25V, V
GEN
=10V
I
D
=1A, R
GS
=50
t
off
200
300
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
ZCN0545A
0
25
50
75
100
125
0
0.2
0.4
0.6
0.8
100us
1ms
10ms
100ms
1s
10s
100s
0
40
80
120
160
Pulse Width
200
t
1
t
p
D= t
1
t
p
D=1 (DC)
D=0.5
D=0.2
D=0.1
SINGLE PULSE
Derating Curve
Transient Thermal Resistance
Temperature
3-113
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain Source Voltage (V)
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
I
D
- Drain Current (A)
NOTE : 80
s
Pulsed test
0
20
40
60
80
1
10
100
C
C
C
iss
oss
rss
NOTE : V =0V
/5
1
10
100
1000
0.01
0.1
1
10
DC
100us
1ms
0.1s
1s
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
0.01
0.1
1
10
0
0.5
1.5
1.0
2.0
2.5
3.0
3.5
0
50
100
125
T
J
- Juntion Temperature (C)
4V
5V
6V
7V
8V
9V
3V
V =10V
/5
V
DS
- Drain Source Voltage (V)
TYPICAL CHARACTERISTICS
NOTE : 80
s Pulsed test
V
DS
=0V
V
DS
=0V
Saturation Characteristics
Transconductance v Drain Current
Pulsed Current v Temperature
Safe Operating Area
(T
amb
=25C, single pulse)
Fall Time v Drain Current
Capacitance v Drain Source Voltage
ZCN0545A
3-114
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