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Datasheet: MPSA92 (Zetex Semiconductors)

Pnp Silicon Planar High Voltage Transistor

 

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Zetex Semiconductors
PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
= 25C
P
tot
680
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
A
V
CB
=-200V, I
E
=0
Emitter Cut-Off Current I
EBO
-0.1
A
V
EB
=-3V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-20mA, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-20mA, I
B
=-2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=10V*
I
C
=-10mA, V
CE
=10V*
I
C
=-30mA,V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
MPSA92
3-84
C
B
E
TYPICAL CHARACTERISTICS
h
F
E
St
atic F
o
rward Cur
r
en
t
T
ra
n
s
fe
r
R
a
ti
o
Safe operating area
I
C
-Co
l
lecto
r
Cur
r
en
t
Amp
s
V
CE
-Collector-Emitter
Voltage (Volts)
50
40
0.1
10
100
60
1.0
V
CE
=10V
f
T
T
r
a
nsi
t
i
o
n Fr
eq
ue
n
c
y
(
M
Hz)
110
30
0.1
10
100
1.0
50
90
130
70
150
170
I
C
-Collector Current (mA)
V
CE
(sat) Collector-Emitter Saturation V
oltage(V
olts)
0
10
1.0
I
C
/ I
B
=10
1.0
3.0
2.0
100
0.001
100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
V
CE
=20V
V
CE
=10V
Single Pulse Test at T
amb
=25C
V
CE(sat)
vs I
C
h
FE
vs I
C
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
f
T
vs I
C
MPSA92
3-85
PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
= 25C
P
tot
680
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
A
V
CB
=-200V, I
E
=0
Emitter Cut-Off Current I
EBO
-0.1
A
V
EB
=-3V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-20mA, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-20mA, I
B
=-2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=10V*
I
C
=-10mA, V
CE
=10V*
I
C
=-30mA,V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
MPSA92
3-84
C
B
E
TYPICAL CHARACTERISTICS
h
F
E
St
atic F
o
rward Cur
r
en
t
T
ra
n
s
fe
r
R
a
ti
o
Safe operating area
I
C
-Co
l
lecto
r
Cur
r
en
t
Amp
s
V
CE
-Collector-Emitter
Voltage (Volts)
50
40
0.1
10
100
60
1.0
V
CE
=10V
f
T
T
r
a
nsi
t
i
o
n Fr
eq
ue
n
c
y
(
M
Hz)
110
30
0.1
10
100
1.0
50
90
130
70
150
170
I
C
-Collector Current (mA)
V
CE
(sat) Collector-Emitter Saturation V
oltage(V
olts)
0
10
1.0
I
C
/ I
B
=10
1.0
3.0
2.0
100
0.001
100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
V
CE
=20V
V
CE
=10V
Single Pulse Test at T
amb
=25C
V
CE(sat)
vs I
C
h
FE
vs I
C
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
f
T
vs I
C
MPSA92
3-85
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