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Datasheet: MPSA77P (Zetex Semiconductors)

Pnp Silicon Planar Medium Power Darlington Transistor

 

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Zetex Semiconductors
PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 1 JUNE 94
FEATURES
* 60 Volt V
CEO
* Gain of 10k at I
C
=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-10
V
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60
V
I
C
=-100
A, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10
V
I
E
=-10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-100
nA
V
CB
=-50V, I
E
=0
Collector Cut-Off
Current
I
CES
-500
nA
V
CE
=-50V
Emitter Cut-Off
Current
I
EBO
-100
nA
V
EB
=-10V, I
C
=0
Collector-Emitter
On Voltage
V
CE(sat)
-1.5
V
I
C
=-100mA, I
B
=-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(on)
-2
V
I
C
=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
10k
10k
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=5V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
MPSA77P
3-83
C
B
E
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