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Datasheet: MPSA42 (Zetex Semiconductors)

Npn Silicon Planar High Voltage Transistor

 

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Zetex Semiconductors
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
680
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=200V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=6V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=20mA, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=20mA, I
B
=2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
40
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
Transition
Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
MPSA42
3-78
C
B
E
V
CE
(
sat
)
C
ollector
-
Emitte
r
Sa
tu
r
at
i
o
n
V
o
l
t
ag
e(
V
olts)
Safe operating area
TYPICAL CHARACTERISTICS
0.1
10
100
1.0
60
0.1
10
100
1.0
0
40
80
20
100
120
0.001
100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
200
0.2
0.1
0.1
10
100
0.3
1.0
200
0
100
40
160
80
60
120
140
20
V
CE
=10V
140
V
CE
=20V
Single Pulse Test at T
amb
=25C
V
CE(sat)
vs I
C
h
FE
vs I
C
f
T
vs I
C
I
C
-
Co
l
lecto
r
C
u
r
r
en
t A
mp
s
V
CE
-Collector-Emitter
Voltage (Volts)
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
h
F
E
St
atic F
o
rward Cur
r
en
t
T
ra
n
s
fe
r
R
a
ti
o
f
T
T
ransition Frequency (MHz)
I
C
/ I
B
=10
MPSA42
3-79
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
680
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=200V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=6V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=20mA, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=20mA, I
B
=2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
40
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
Transition
Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
MPSA42
3-78
C
B
E
V
CE
(
sat
)
C
ollector
-
Emitte
r
Sa
tu
r
at
i
o
n
V
o
l
t
ag
e(
V
olts)
Safe operating area
TYPICAL CHARACTERISTICS
0.1
10
100
1.0
60
0.1
10
100
1.0
0
40
80
20
100
120
0.001
100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
200
0.2
0.1
0.1
10
100
0.3
1.0
200
0
100
40
160
80
60
120
140
20
V
CE
=10V
140
V
CE
=20V
Single Pulse Test at T
amb
=25C
V
CE(sat)
vs I
C
h
FE
vs I
C
f
T
vs I
C
I
C
-
Co
l
lecto
r
C
u
r
r
en
t A
mp
s
V
CE
-Collector-Emitter
Voltage (Volts)
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
h
F
E
St
atic F
o
rward Cur
r
en
t
T
ra
n
s
fe
r
R
a
ti
o
f
T
T
ransition Frequency (MHz)
I
C
/ I
B
=10
MPSA42
3-79
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