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Datasheet: MPS5179 (Zetex Semiconductors)

Npn Silicon Planar High Frequency Transistor

 

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Zetex Semiconductors
NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 2 FEB 1994
FEATURES
* HIGH f
T
=900MHz MIN
* MAX CAPACITANCE=1pF
* LOW NOISE 5dB
APPLICATIONS
* CORDLESS TELEPHONES
* KEYLESS ENTRY SYSTEMS
* WIDEBAND INSTRUMENTATION AMPLIFIERS
* TELEMETRY
* WIRELESS LANS
* REMOTE METERING
* TAGGING
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
2.5
V
Continuous Collector Current
I
C
50
mA
Power Dissipation
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
Note: Spice model available
E-Line
TO92 Compatible
MPS5179
PAGE NO
C
B
E
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: 0161-627 5105 (Sales), 0161-627 4963 (General Enquiries)
Facsimile: 0161-627 5467 Telex: 668038
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Drosselweg 30
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81827 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (089) 430 90 29
Telephone: (516) 543-7100
Telephone: 26100 611
Zetex plc 1995
Fax: (089) 439 37 64
Fax: (516) 864-7630
Fax: 242 0 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of
any product or service.
S00406 February 1994
MPS5179
MPS5179
MPS5179
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20
V
I
C
= 1
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
12
V
I
C
= 3mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
2.5
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.02
1.0
A
A
V
CB
=15V, I
E
=0
V
CB
=15V, I
E
=0,
T
amb
=150C
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=10mA, I
B
=1mA
Static Forward
Current Transfer Ratio
h
FE
25
250
I
C
=3mA, V
CE
=1V
Transition Frequency f
T
900
2000
MHz
I
C
=5mA, V
CE
=6V,
f=100MHz
Collector-Base
Capacitance
C
cb
1.0
pF
I
E
=0, V
CB
=10V, f=1MHz
Small Signal
Current Gain
h
fe
25
300
I
C
=2mA, V
CE
=6V, f=1KHz
Collector Base
Time Constant
rbC
c
3.0
14
ps
I
E
=2mA, V
CE
=6V,
f=31.9MHz
Noise Figure
NF
5
dB
I
C
=1.5mA, V
CE
=6V
R
S
=50
, f=200MHz
Common-Emitter
Amplifier Power Gain
Gpe
15
dB
I
C
=5mA, V
CE
=6V
f=200MHz
MPS5179
MPS5179
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20
V
I
C
= 1
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
12
V
I
C
= 3mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
2.5
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.02
1.0
A
A
V
CB
=15V, I
E
=0
V
CB
=15V, I
E
=0,
T
amb
=150C
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=10mA, I
B
=1mA
Static Forward
Current Transfer Ratio
h
FE
25
250
I
C
=3mA, V
CE
=1V
Transition Frequency f
T
900
2000
MHz
I
C
=5mA, V
CE
=6V,
f=100MHz
Collector-Base
Capacitance
C
cb
1.0
pF
I
E
=0, V
CB
=10V, f=1MHz
Small Signal
Current Gain
h
fe
25
300
I
C
=2mA, V
CE
=6V, f=1KHz
Collector Base
Time Constant
rbC
c
3.0
14
ps
I
E
=2mA, V
CE
=6V,
f=31.9MHz
Noise Figure
NF
5
dB
I
C
=1.5mA, V
CE
=6V
R
S
=50
, f=200MHz
Common-Emitter
Amplifier Power Gain
Gpe
15
dB
I
C
=5mA, V
CE
=6V
f=200MHz
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