HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: FZTA92 (Zetex Semiconductors)

Pnp Silicon Planar High Voltage Transistor

 

Скачать: PDF   ZIP
Zetex Semiconductors
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 JANUARY 1996
7
FEATURES
* High breakdown voltage
APPLICATIONS
* Suitable for video output stages in TV sets
and switch mode power supplies
COMPLIMENTARY TYPE
FZTA42
PARTMARKING DETAIL
DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Base Current
I
B
-100
mA
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
A
V
CB
=-200V, I
E
=0
Emitter Cut-Off Current I
EBO
-0.1
A
V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-20mA, I
B
=-2mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-20mA, I
B
=-2mA
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=-20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMTA92 datasheet.
FZTA92
C
C
E
B
3 - 305
© 2018 • ChipFind
Контакты
Главная страница