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Datasheet: FZTA64 (Zetex Semiconductors)

Pnp Silicon Planar Darlington Transistors

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 5 MARCH 2001
PARTMARKING DETAILS:
FZTA64
COMPLIMENTARY TYPE:
FZTA14
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-800
mA
Continuous Collector Current
I
C
-500
mA
Peak Base Current
I
BM
-200
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-30
V
I
C
=-10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
V
I
C
=-10mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-10
V
I
E
=-10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-100
nA
V
CB
=-30V, I
E
=0
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-10V, I
C
=0
Collector-Emitter Saturation
Voltage
V
CE(sat)
-1.5
V
I
C
=-100mA, I
B
=-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-2.0
V
I
C
=-100mA, I
B
=-0.1mA*
Static Forward Current
Transfer Ratio
h
FE
10K
20K
IC=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
Transition
Frequency
f
T
125
MHz
I
C
=-50mA, V
CE
=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FZTA64
SOT223
2
1
3
4
TBA
FZTA64
1m
100m
10
1m
100m
10
1m
100m
10
1
10
100
10
100m
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
1.5
V
CE
(s
a
t
)
- (
V
)
I
C
/I
B
=1000
+25 C
-55 C
h
FE
- T
y
p
i
c
a
l
G
a
in
60k
30k
+100 C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25 C
+100 C
V
BE
(
o
n
)
- (
V
)
-55 C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100 C
V
CE
(s
a
t
)
- (V
)
+25 C
I
C
- Collector Current (A)
+100 C
V
BE
(s
a
t
)
-
(V
)
2.1
+25 C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
I
C
-
C
o
lle
c
t
o
r
C
u
rre
n
t
(
A
)
1
0.1
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
V
CE
=5V
+25 C
-55 C
I
C
/I
B
=1000
V
CE
=5V
-55 C
I
C
/I
B
=1000
1
10m
0.5
1.0
10
1
100m
10m
1m
0
0.5
1.0
1.5
15k
45k
10m
1
0.7
1.4
10m
1
10m
1
0.5
1.0
1.5
2.0
V
CE(sat)
v I
C
TYPICAL CHARACTERISTICS
TBA
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