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Datasheet: FZTA42 (Zetex Semiconductors)

Npn Silicon Planar High Voltage Transistor

 

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Zetex Semiconductors
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 NOVEMBER 93
7
FEATURES
* Suitable for video output stages in TV sets
and switch mode power supplies
* High breakdown voltage
COMPLIMENTARY TYPE FZTA92
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Base Current
I
B
100
mA
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=200V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=20mA, I
B
=2mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=20mA, I
B
=2mA
Static Forward Current
Transfer Ratio
h
FE
25
40
40
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
Transition
Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMTA42 datasheet.
FZTA42
3 - 302
C
C
E
B
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