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Datasheet: FZT957 (Zetex Semiconductors)

Pnp Silicon Planar High Current (high Performance) Transistors

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES - FZT957 - FZT857
FZT958 - N/A
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT957
FZT958
UNIT
Collector-Base Voltage
V
CBO
-300
-400
V
Collector-Emitter Voltage
V
CEO
-300
-400
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-2
-1.5
A
Continuous Collector Current
I
C
-1
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT957
FZT958
C
C
E
B
3 - 289
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-330
-440
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-330
-440
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
-400
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-60
-110
-170
-100
-165
-240
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-1A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-910
-1150 mV
I
C
=-1A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-750
-1020 mV
I
C
=-1A, V
CE
=-10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
90
200
200
170
10
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-2A, V
CE
=-10V*
Transition Frequency
f
T
85
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
23
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
108
2500
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT957
3 - 290
FZT957
3 - 291
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
V
-
(
V
ol
ts
)
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Nor
ma
l
i
se
d G
a
i
n
V
-
(
V
ol
ts
)
V
-
(
V
ol
ts
)
I
C
/I
B
=20
I
C
/I
B
=5
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
-
T
y
pi
c
a
l
G
a
in
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
I
+
-
Collector Current (Amps)
-55C
+25C
+175C
I
C
/I
B
=5
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-330
-440
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-330
-440
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
-400
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-60
-110
-170
-100
-165
-240
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-1A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-910
-1150 mV
I
C
=-1A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-750
-1020 mV
I
C
=-1A, V
CE
=-10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
90
200
200
170
10
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-2A, V
CE
=-10V*
Transition Frequency
f
T
85
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
23
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
108
2500
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT957
3 - 290
FZT957
3 - 291
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
V
-
(
V
ol
ts
)
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Nor
ma
l
i
se
d G
a
i
n
V
-
(
V
ol
ts
)
V
-
(
V
ol
ts
)
I
C
/I
B
=20
I
C
/I
B
=5
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
-
T
y
pi
c
a
l
G
a
in
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
I
+
-
Collector Current (Amps)
-55C
+25C
+175C
I
C
/I
B
=5
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
FZT958
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
-600
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-400
-600
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-400
-550
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
I
C
=-10mA, I
B
=-1mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-830
-950
mV
I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-725
-840
mV
I
C
=-500mA, V
CE
=-10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
10
200
200
20
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency
f
T
85
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
19
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
104
2400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
3 - 292
FZT958
3 - 293
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
-55C
+25C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- Nor
mali
sed G
ai
n
V
- (
V
ol
ts
)
V
- (
V
ol
ts
)
I
C
/I
B
=5
I
C
/I
B
=20
I
C
/I
B
=5
-55C
+25C
+100C
+175C
I
C
/I
B
=10
+100C
+25C
-55C
V
CE
=10V
-55C
+25C
+100C
+175C
V
CE
=10V
300
200
100
h
-

T
ypic
a
l G
a
i
n
0.001
0.001
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
FZT958
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
-600
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-400
-600
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-400
-550
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
I
C
=-10mA, I
B
=-1mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-830
-950
mV
I
C
=-500mA, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-725
-840
mV
I
C
=-500mA, V
CE
=-10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
10
200
200
20
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency
f
T
85
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
19
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
104
2400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
3 - 292
FZT958
3 - 293
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
-55C
+25C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- Nor
mali
sed G
ai
n
V
- (
V
ol
ts
)
V
- (
V
ol
ts
)
I
C
/I
B
=5
I
C
/I
B
=20
I
C
/I
B
=5
-55C
+25C
+100C
+175C
I
C
/I
B
=10
+100C
+25C
-55C
V
CE
=10V
-55C
+25C
+100C
+175C
V
CE
=10V
300
200
100
h
-

T
ypic
a
l G
a
i
n
0.001
0.001
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
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