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Datasheet: FZT956 (Zetex Semiconductors)

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 OCTOBER 1995
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
PARTMARKING DETAILS
DEVICE TYPE IN FULL
COMPLEMENTARY TYPES FZT955 - FZT855
FZT956 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT955
FZT956
UNIT
Collector-Base Voltage
V
CBO
-180
-220
V
Collector-Emitter Voltage
V
CEO
-140
-200
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-10
-5
A
Continuous Collector Current
I
C
-4
-2
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT955
FZT956
3 - 284
C
C
E
B
3 - 285
3 - 286
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-

(V
olts)
T
amb
=25C
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-
(
V
olts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
is
e
d
Gain
V
B
E
(s
at)
-

(V
olts)
V
B
E
-
(
V
olts)
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt (Amp
s
)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=5V
V
CE
=5V
300
200
100
h
FE
- T
ypical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
0.001
FZT955
FZT955
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-180
-210
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-180
-210
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-140
-170
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-150V
V
CB
=-150V,T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-150V
V
CB
=-150V,T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-30
-70
-110
-275
-60
-120
-150
-370
mV
mV
mV
mV
I
C
=-100mA, I
B
=-5mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-970
-1110 mV
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-830
-950
mV
I
+
=-3A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
10
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
I
C
=-10A, V
CE
=-5V*
Transition Frequency
f
T
110
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
40
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
68
1030
ns
ns
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
3 - 285
3 - 286
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-

(V
olts)
T
amb
=25C
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
-
(
V
olts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
is
e
d
Gain
V
B
E
(s
at)
-

(V
olts)
V
B
E
-
(
V
olts)
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt (Amp
s
)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=5V
V
CE
=5V
300
200
100
h
FE
- T
ypical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
1000
10
100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
0.001
FZT955
FZT955
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-180
-210
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-180
-210
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-140
-170
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-150V
V
CB
=-150V,T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-150V
V
CB
=-150V,T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-30
-70
-110
-275
-60
-120
-150
-370
mV
mV
mV
mV
I
C
=-100mA, I
B
=-5mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-970
-1110 mV
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-830
-950
mV
I
+
=-3A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
10
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
I
C
=-10A, V
CE
=-5V*
Transition Frequency
f
T
110
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
40
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
68
1030
ns
ns
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT956
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-220
-300
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-220
-300
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-240
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-200V
V
CB
=-200V,T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-200V
V
CB
=-200V,T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-30
-120
-168
-50
-165
-275
mV
mV
mV
I
C
=-100mA,I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-970
-1110 mV
I
C
=-2A, I
B
=-400mA
Base-Emitter
Turn-On Voltage
V
BE(on)
-810
-950
mV
I
C
=-2A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
100
100
50
200
200
150
10
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-5A, V
CE
=-5V*
Transition Frequency
f
T
110
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
32
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
67
1140
ns
ns
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT956
3 - 287
3 - 288
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
o
lts)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
ts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Norm
al
i
se
d
G
ai
n
V
-
(
V
ol
ts)
V
-
(
V
ol
ts
)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=1V
V
CE
=1V
300
200
100
h
-
T
ypi
cal
Ga
i
n
0.001
0.001
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
FZT956
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-220
-300
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-220
-300
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-240
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-200V
V
CB
=-200V,T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-200V
V
CB
=-200V,T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-30
-120
-168
-50
-165
-275
mV
mV
mV
I
C
=-100mA,I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-970
-1110 mV
I
C
=-2A, I
B
=-400mA
Base-Emitter
Turn-On Voltage
V
BE(on)
-810
-950
mV
I
C
=-2A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
100
100
50
200
200
150
10
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-5A, V
CE
=-5V*
Transition Frequency
f
T
110
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
32
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
67
1140
ns
ns
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT956
3 - 287
3 - 288
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
o
lts)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
ts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Norm
al
i
se
d
G
ai
n
V
-
(
V
ol
ts)
V
-
(
V
ol
ts
)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=1V
V
CE
=1V
300
200
100
h
-
T
ypi
cal
Ga
i
n
0.001
0.001
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
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