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Datasheet: FZT953 (Zetex Semiconductors)

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
*
5 Amps continuous current , up to 15 Amps peak current
*
Very low saturation voltages
*
Excellent gain characteristics specified up to 10 Amps
*
P
tot
= 3 watts
*
FZT951 exhibts extremely low equivalent on resistance;
R
CE(sat)
55m
at 4A
COMPLEMENTARY TYPES -
FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT951
FZT953
UNIT
Collector-Base Voltage
V
CBO
-100
-140
V
Collector-Emitter Voltage
V
CEO
-60
-100
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-15
-10
A
Continuous Collector Current
I
C
-5
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT951
FZT953
C
C
E
B
3 - 279
3 - 280
3 - 281
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at
)
- (V
olts)
T
amb
=25C
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
s
at
)
- (V
olts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Normalised

G
a
in
V
B
E
(s
at
)
- (V
olts)
V
B
E
- (V
olts)
I
C
- Colle
c
tor Curre
n
t (
A
mps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=1V
V
CE
=1V
300
200
100
h
FE
-
T
y
p
i
c
a
l

G
a
i
n
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.1
1
10
100
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
0.001
FZT951
FZT951
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-100
-140
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
-100
-140
V
I
C
=-1
A, RB1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-60
-90
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-80V
V
CB
=-80V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-80V
V
CB
=-80V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-85
-155
-370
-50
-140
-210
-460
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1080
-1240
mV
I
C
=-5A, I
B
=-500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-935
-1070
mV
I
C
=-5A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
10
200
200
90
25
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition Frequency
f
T
120
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
74
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
82
350
ns
ns
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
* Measured under pulsed conditions. Pulse width =300
s. duty cycle 2%
Spice parameter data is available upon request for this device
3 - 280
3 - 281
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at
)
- (V
olts)
T
amb
=25C
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
s
at
)
- (V
olts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Normalised

G
a
in
V
B
E
(s
at
)
- (V
olts)
V
B
E
- (V
olts)
I
C
- Colle
c
tor Curre
n
t (
A
mps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=1V
V
CE
=1V
300
200
100
h
FE
-
T
y
p
i
c
a
l

G
a
i
n
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.1
1
10
100
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
0.001
FZT951
FZT951
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-100
-140
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
-100
-140
V
I
C
=-1
A, RB1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-60
-90
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-80V
V
CB
=-80V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-80V
V
CB
=-80V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-85
-155
-370
-50
-140
-210
-460
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1080
-1240
mV
I
C
=-5A, I
B
=-500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-935
-1070
mV
I
C
=-5A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
10
200
200
90
25
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition Frequency
f
T
120
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
74
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
82
350
ns
ns
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
* Measured under pulsed conditions. Pulse width =300
s. duty cycle 2%
Spice parameter data is available upon request for this device
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140
-170
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
-140
-170
V
I
C
=-1
A, RB1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-100
-120
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1010
-1170
mV
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-925
-1160
mV
I
C
=-4A, V
CE
=-1V*
Static Forward
Current Transfer
h
FE
100
100
50
30
200
200
90
50
15
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-3A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition Frequency
f
T
125
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
65
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
110
460
ns
ns
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 283
FZT953
3 - 282
FZT953
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
T
amb
=25C
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(s
a
t
)
- (V
olts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-

No
r
ma
l
ised
Ga
i
n
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-

Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=1V
V
CE
=1V
300
200
100
h
FE
-
T
y
p
i
cal
Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140
-170
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
-140
-170
V
I
C
=-1
A, RB1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-100
-120
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1010
-1170
mV
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-925
-1160
mV
I
C
=-4A, V
CE
=-1V*
Static Forward
Current Transfer
h
FE
100
100
50
30
200
200
90
50
15
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-3A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition Frequency
f
T
125
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
65
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
110
460
ns
ns
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 283
FZT953
3 - 282
FZT953
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
T
amb
=25C
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(s
a
t
)
- (V
olts)
-55C
+25C
+175C
-55C
+25C
+100C
+175C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-

No
r
ma
l
ised
Ga
i
n
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-

Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=1V
V
CE
=1V
300
200
100
h
FE
-
T
y
p
i
cal
Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
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