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Datasheet: FZT949 (Zetex Semiconductors)

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - NOVEMBER 1995
FEATURES
*
Extremely low equivalent on-resistance; R
CE(sat)
*
6 Amps continuous current
*
Up to 20 Amps peak current
*
Very low saturation voltage
*
Excellent h
FE
characteristics specified upto 20 Amps
PARTMARKING DETAILS -- DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT948
FZT949
UNIT
Collector-Base Voltage
V
CBO
-40
-50
V
Collector-Emitter Voltage
V
CEO
-20
-30
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-6
-5.5
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature
Range
T
j
:Tstg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT948
FZT949
C
C
E
B
TBA
FZT948
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-40
-55
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-40
-55
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
-30
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-60
-110
-200
-360
-130
-180
-280
-450
mV
mV
mV
mV
I
C
=-0.5A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-6A, I
B
=-250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1050
-1200
mV
I
C
=-5A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-870
-1050
mV
I
C
=-6A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
60
15
200
200
160
130
40
300
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
80
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
163
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
126
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
R
CE(sat)
46m
at 5A
TBA
FZT948
TBA
FZT949
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
-80
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-50
-80
V
I
C
=-1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
-45
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
-50
-1
nA
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-50
-85
-190
-350
-75
-140
-270
-440
mV
mV
mV
mV
I
C
=-0.5A, I
B
=-20mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5.5A, I
B
=-500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1100
-1250
mV
I
C
=-5.5A, I
B
=-500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-900
-1060
mV
I
C
=-5.5A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
35
300
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
122
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
130
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
R
CE(sat)
44m
at 4.5A
TBA
FZT949
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)

V
C
E
(
s
a
t
)
-

(
V
o
l
t
s
)
T
amb
=25C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)

V
C
E
(
s
a
t
)
-

(
V
o
l
t
s
)
I
C
- Collector Current (Amps)
I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-

N
o
r
m
a
l
i
s
e
d
G
a
i
n

V
B
E
(
s
a
t
)
-

(
V
o
l
t
s
)

V
B
E
-

(
V
o
l
t
s
)
I
C
/I
B
=10
I
C
/I
B
=50
V
CE
=1V
-55C
+25C
+100C
+175C
0.001
0.01
0.1
20
1
10
-55C
+25C
+175C
I
C
/I
B
=10
0.001
0.01
0.1
20
1
10
I
C
/I
B
=10
-55C
+25C
+100C
+175C
0.001
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
CE
=1V
300
200
100
h
FE
- T
y
pi
c
a
l
Gain
0.001
0.001
Safe Operating Area
Single Pulse Test T
amb
=25 C
I
C
- Collector Curre
n
t
(A)
0.1
1
1
10
100
V
ce
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
100
0.1
TBA
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