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Datasheet: FZT857 (Zetex Semiconductors)

Npn Silicon Planar High Current (high Performance)transistor

 

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Zetex Semiconductors
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - SEPTEMBER 1997
FEATURES
*
Up to 3.5 Amps continuous collector current, up to 5 Amp peak
*
V
CEO
= 300V
*
Very low saturation voltage
*
Excellent h
FE
specified up to 3 Amps
PARTMARKING DETAIL -
FZT857
COMPLEMENTARY TYPE -
FZT957
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
350
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
5
A
Continuous Collector Current
I
C
3.5
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
FZT857
C
C
E
B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
350
475
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
350
475
V
I
C
=1
A, RB1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
350
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=300V
V
CB
=300V,
T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
50
1
nA
A
V
CB
=300V
V
CB
=300V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
100
155
230
345
mV
mV
mV
mV
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=3.5A, I
B
=600mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1250
mV
I
C
=3.5A, I
B
=600mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.12
V
I
C
=3.5A, V
CE
=10V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
15
200
200
25
15
300
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
Transition Frequency
f
T
80
MHz
I
C
==100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
11
pF
V
CB
=20V, f=1MHz
Switching Times
t
on
t
off
100
5300
ns
ns
I
C
=250mA, I
B1
=25mA
I
B2
=25mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
FZT857
FZT857
0.001
0.01
0.1
1
0.4
0
0.8
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)

V
C
E
(
s
a
t
)
-

(
V
o
l
t
s
)
I
C
- Collector Current (Amps)
V
BE(sat)
v I
C
0.001
0.01
0.1
1
1.0
0.5
2.0
1.5
I
C
- Collector Current (Amps)
V
BE(on)
v I
C

V
B
E
-

(
V
o
l
t
s
)

V
B
E
(
s
a
t
)
-

(
V
o
l
t
s
)
0.6
0.2
0.01
0.1
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
h
FE
v I
C
h
F
E
-

N
o
r
m
a
l
i
s
e
d

G
a
i
n
300
200
100
h
FE
- T
y
p
i
c
a
l
G
a
in
0
10
V
CE
=2V
10
0.0001
0.001
0.01
0.1
1
1.0
0.5
2.0
1.5
10
0.0001
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=50
V
CE
=10V
I
C
/I
B
=50
I
C
/I
B
=10
I
C
-
C
o
l
l
ec
to
r
Cur
r
ent
(A)
Safe Operating Area
Single Pulse Test Tamb=25 C
0.1
1
1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
1000
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