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Datasheet: FZT853TA (Zetex Semiconductors)

NPN High Voltagetransistor

 

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Zetex Semiconductors
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
*
Extremely low equivalent on-resistance; R
CE(sat)
44m
at 5A
*
6 Amps continuous current, up to 20 Amps peak current
*
Very low saturation voltages
*
Excellent h
FE
characteristics specified up to 10 Amps
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
COMPLEMENTARY TYPES -
FZT851
FZT951
FZT853
FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT851
FZT853
UNIT
Collector-Base Voltage
V
CBO
150
200
V
Collector-Emitter Voltage
V
CEO
60
100
V
Emitter-Base Voltage
V
EBO
6
6
V
Peak Pulse Current
I
CM
20
10
A
Continuous Collector Current
I
C
6
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT851
FZT853
C
C
E
B
3 - 260
FZT853
ELECTRICAL CHARACTERISTICS T
amb
= 25C (atunless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
200
300
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
200
300
V
I
C
=1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
100
120
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
10
1
nA
A
V
CB
=150V, T
amb
=25C
V
CB
=150V
T
amb
=100 C
Collector Cut-Off Current
I
CER
R
1k
10
1
nA
A
V
CB
=150V, T
amb
=25C
V
CB
=150V
T
amb
=100 C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
14
100
50
150
340
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1250
mV
I
C
=5A, I
B
=500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1100
mV
I
C
=5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
50
20
200
200
100
30
300
I
C
=10mA, V
CE
=2V
I
C
=2A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition
Frequency
f
T
130
MHz
I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
35
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
50
1650
ns
ns
I
C
=1A, V
CC
=10V
I
B1
=I
B2
=100mA,
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT853
0.01
0.1
1
10
0.4
0
0.8
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE(s
at
)
-
(
V
o
l
ts
)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
0.01
0.1
1
10
1.0
0.5
2.0
1.5
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
BE
-
(
V
o
l
ts
)
V
BE(s
at)
- (V
o
l
ts
)
0.6
0.2
0.01
0.1
1 10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
FE
-
No
r
m
a
l
is
e
d
Gai
n
300
200
100
h
FE
-
T
y
p
i
c
a
l
Gai
n
100
V
CE
=1V
100
0.001
0.01
0.1
1
10
1.0
0.5
2.0
1.5
100
0.001
V
CE
=1V
I
C
/I
B
=10
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=50
100
I
C
/I
B
=10
Safe Operating Area
Single Pulse Test Tamb=25 C
I
C
-
Col
le
cto
r C
u
r
ren
t (A
)
0.1
1
1
0.1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
3 - 263
3 - 264
FZT853
ELECTRICAL CHARACTERISTICS T
amb
= 25C (atunless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
200
300
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
200
300
V
I
C
=1
A, RB
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
100
120
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
10
1
nA
A
V
CB
=150V, T
amb
=25C
V
CB
=150V
T
amb
=100 C
Collector Cut-Off Current
I
CER
R
1k
10
1
nA
A
V
CB
=150V, T
amb
=25C
V
CB
=150V
T
amb
=100 C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
14
100
50
150
340
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1250
mV
I
C
=5A, I
B
=500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1100
mV
I
C
=5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
50
20
200
200
100
30
300
I
C
=10mA, V
CE
=2V
I
C
=2A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition
Frequency
f
T
130
MHz
I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
35
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
50
1650
ns
ns
I
C
=1A, V
CC
=10V
I
B1
=I
B2
=100mA,
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT853
0.01
0.1
1
10
0.4
0
0.8
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE(s
at
)
-
(
V
o
l
ts
)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
0.01
0.1
1
10
1.0
0.5
2.0
1.5
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
BE
-
(
V
o
l
ts
)
V
BE(s
at)
- (V
o
l
ts
)
0.6
0.2
0.01
0.1
1 10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
FE
-
No
r
m
a
l
is
e
d
Gai
n
300
200
100
h
FE
-
T
y
p
i
c
a
l
Gai
n
100
V
CE
=1V
100
0.001
0.01
0.1
1
10
1.0
0.5
2.0
1.5
100
0.001
V
CE
=1V
I
C
/I
B
=10
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=50
100
I
C
/I
B
=10
Safe Operating Area
Single Pulse Test Tamb=25 C
I
C
-
Col
le
cto
r C
u
r
ren
t (A
)
0.1
1
1
0.1
10
100
V
CE
- Collector Voltage (V)
10
DC
10ms
1ms
100
s
100ms
1s
0.01
3 - 263
3 - 264
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