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Datasheet: FZT849 (Zetex Semiconductors)

Npn Silicon Planar High Current (high Performance) Transistor

 

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Zetex Semiconductors
FZT849
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; R
CE(sat)
36m
at 5A
* 7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
* P
tot
=3 Watts
PARTMARKING DETAILS -
FZT849
COMPLEMENTARY TYPE -
FZT949
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
7
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT849
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
80
120
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
80
120
V
I
C
=1
A, RB
1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
30
40
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
50
1
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
35
67
168
50
110
215
350
mV
mV
mV
mV
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=6.5A, I
B
=300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.2
V
I
C
=6.5A, I
B
=300mA
Base-Emitter Turn-On Voltage V
BE(on)
1.13
V
I
C
=6.5A, V
CE
=1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
100
30
200
200
150
65
300
I
C
=10mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
100
MHz
I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
75
pF
V
CB
=10V, f=1MHz*
Switching Times
t
on
t
off
45
630
ns
ns
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
C
C
E
B
3 - 258
3 - 257
FZT849
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; R
CE(sat)
36m
at 5A
* 7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
* P
tot
=3 Watts
PARTMARKING DETAILS -
FZT849
COMPLEMENTARY TYPE -
FZT949
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
7
A
Power Dissipation at T
amb
=25C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT849
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
80
120
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
80
120
V
I
C
=1
A, RB
1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
30
40
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100C
Collector Cut-Off Current
I
CER
R
1k
50
1
nA
A
V
CB
=70V
V
CB
=70V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
35
67
168
50
110
215
350
mV
mV
mV
mV
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=6.5A, I
B
=300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.2
V
I
C
=6.5A, I
B
=300mA
Base-Emitter Turn-On Voltage V
BE(on)
1.13
V
I
C
=6.5A, V
CE
=1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
100
30
200
200
150
65
300
I
C
=10mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
100
MHz
I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
75
pF
V
CB
=10V, f=1MHz*
Switching Times
t
on
t
off
45
630
ns
ns
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
C
C
E
B
3 - 258
3 - 257
0.01
0.1
1
10
0.4
0
0.8
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
-
(
V
ol
ts
)
I
+
-
Collector Current (Amps)
V
BE(sat)
v I
C
I
-
C
ol
l
ect
or
C
ur
r
en
t
(A
m
ps
)
V
+-
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.1
1
10
100
Single Pulse Test at T
amb
=25C
0.01
0.1
1
10
1.0
0.5
2.0
1.5
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C

V
-

(V
o
l
ts
)
V
CE
=1V

V
-
(V
o
l
t
s)
I
C
/I
B
=10
0.6
0.2
0.01
0.1
1
10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
-
N
o
rm
al
i
sed

Ga
i
n
300
200
100
h
-
T
y
pi
ca
l
G
a
i
n
D.C.
1s
100ms
10ms
1.0ms
0.1ms
V
CE
=5V
100
V
CE
=1V
100
0.001
I
C
/I
B
=50
0.01
0.1
1
10
1.0
0.5
2.0
1.5
100
0.001
I
C
/I
B
=50
I
C
/I
B
=10
100
FZT849
3 - 259
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