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Datasheet: FZT796 (Zetex Semiconductors)

Pnp Silicon Planar Medium Power High Gain Transistor

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt V
CEO
* Gain of 250 at I
C
=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
FZT696B
PARTMARKING DETAIL -
FZT796A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-200
V
Collector-Emitter Voltage
V
CEO
-200
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
-200
V
I
C
=-100
A
V
(BR)CEO
-200
V
I
C
=-10mA*
Emitter-Base
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-150V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.3
-0.3
V
V
V
I
C
=-50mA, I
B
=-2mA*
I
C
=-100mA, I
B
=-5mA*
I
C
=-200mA, I
B
=-20mA*
Base-EmitterSaturationVoltage V
BE(sat)
-0.95 V
I
C
=-200mA,I
B
=-20mA*
Base-EmitterTurn-OnVoltage
V
BE(on)
-0.67
V
I
C
=-200mA,V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
300
300
250
100
800
I
C
=-10mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-400mA, V
CE
=-10V*
Transition Frequency
f
T
100
MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
12
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
100
3200
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT796A
FZT796A
C
C
E
B
3 - 256
3 - 255
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
IC -
Collector Current (Amps)

V
- (V
o
l
ts)
I
+
-
Collector Current (Amps)

V
-
(
V
o
lts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
-

No
r
mal
i
se
d
G
a
in

V
-
(
V
o
lts)
750
500
250
h
- T
yp
i
c
al Gai
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2

V
-
(
V
ol
ts)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
0.001
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
0.001
I
C
/I
B
=20
V
CE
=10V
V
CE
=10V
I
C
/I
B
=10
TYPICAL CHARACTERISTICS
I
+
-Col
lector C
u
r
rent

(A
)
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
1000
0.001
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt V
CEO
* Gain of 250 at I
C
=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
FZT696B
PARTMARKING DETAIL -
FZT796A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-200
V
Collector-Emitter Voltage
V
CEO
-200
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
-200
V
I
C
=-100
A
V
(BR)CEO
-200
V
I
C
=-10mA*
Emitter-Base
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-150V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.3
-0.3
V
V
V
I
C
=-50mA, I
B
=-2mA*
I
C
=-100mA, I
B
=-5mA*
I
C
=-200mA, I
B
=-20mA*
Base-EmitterSaturationVoltage V
BE(sat)
-0.95 V
I
C
=-200mA,I
B
=-20mA*
Base-EmitterTurn-OnVoltage
V
BE(on)
-0.67
V
I
C
=-200mA,V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
300
300
250
100
800
I
C
=-10mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-400mA, V
CE
=-10V*
Transition Frequency
f
T
100
MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
12
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
100
3200
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT796A
FZT796A
C
C
E
B
3 - 256
3 - 255
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
IC -
Collector Current (Amps)

V
- (V
o
l
ts)
I
+
-
Collector Current (Amps)

V
-
(
V
o
lts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
-

No
r
mal
i
se
d
G
a
in

V
-
(
V
o
lts)
750
500
250
h
- T
yp
i
c
al Gai
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2

V
-
(
V
ol
ts)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
0.001
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
0.001
I
C
/I
B
=20
V
CE
=10V
V
CE
=10V
I
C
/I
B
=10
TYPICAL CHARACTERISTICS
I
+
-Col
lector C
u
r
rent

(A
)
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
1000
0.001
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