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Datasheet: FZT795A (Zetex Semiconductors)

Pnp Silicon Planar Medium Power High Gain Transistor

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 140 Volt V
CEO
* Gain of 250 at I
C
=0.2 Amps and very low V
CE(sat)
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE FZT694B
PARTMARKING DETAIL FZT795A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-140
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-140
V
I
C
=-100
A
V
(BR)CEO
-140
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Cut-Off Currents
I
CBO
-0.1
A
V
CB
=-100V
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.3
-0.25
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95 V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
100
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
Transition Frequency
f
T
100
MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
100
1900
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT795A
FZT795A
C
C
E
B
3 - 254
3 - 253
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
olt
s
)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
olt
s
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-

No
rm
al
i
s
ed G
ai
n
V
-
(V
ol
ts)
750
500
250
h
- T
y
pical
G
a
i
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
-

(
V
ol
ts)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
0.001
TYPICAL CHARACTERISTICS
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
0.001
I
C
/I
B
=40
V
CE
=2V
V
CE
=2V
I
C
/I
B
=10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
1000
0.001
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 140 Volt V
CEO
* Gain of 250 at I
C
=0.2 Amps and very low V
CE(sat)
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE FZT694B
PARTMARKING DETAIL FZT795A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-140
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-140
V
I
C
=-100
A
V
(BR)CEO
-140
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Cut-Off Currents
I
CBO
-0.1
A
V
CB
=-100V
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.3
-0.25
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95 V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
100
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
Transition Frequency
f
T
100
MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
100
1900
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT795A
FZT795A
C
C
E
B
3 - 254
3 - 253
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
olt
s
)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
olt
s
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-

No
rm
al
i
s
ed G
ai
n
V
-
(V
ol
ts)
750
500
250
h
- T
y
pical
G
a
i
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
-

(
V
ol
ts)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
0.001
TYPICAL CHARACTERISTICS
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
0.001
I
C
/I
B
=40
V
CE
=2V
V
CE
=2V
I
C
/I
B
=10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
1000
0.001
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