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Datasheet: FZT792A (Zetex Semiconductors)

PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
FZT692B
PARTMARKING DETAIL -
FZT792A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-75
V
Collector-Emitter Voltage
V
CEO
-70
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-5
A
Continuous Collector Current
I
C
-2
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-75
-100
V
I
C
=-100
A
V
(BR)CEO
-70
-90
V
I
C
=-10mA*
V
(BR)EBO
-5
-8.5
V
I
E
=-100
A
Cut-Off Currents
I
CBO
-0.1
-10
A
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100C
I
EBO
-0.1
A
V
EB
=-4V
Saturation Voltages
V
CE(sat)
-0.30
-0.30
-0.30
-0.45
-0.50
-0.50
V
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
I
C
=-2A, I
B
=-200mA*
V
BE(sat)
-0.80 -0.95 V
I
C
=-1A, I
B
=-25mA*
FZT792A
C
C
E
B
3 - 250
FZT792A
FZT792A
3 - 252
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward
Current Transfer
h
FE
300
250
200
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
Transition Frequency
f
T
100
160
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
22
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
750
ns
ns
I
C
=-500mA,
I
B1
=-50mA,
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
I
C
/I
B
=100
V
CE
=2V
I
C
/I
B
=40
V
CE
=2V
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-

(V
olt
s)
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-

(V
ol
ts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-

Norm
ali
s
ed
Gain
V
-

(V
olt
s)
750
500
250
h
-

T
y
pic
al Gai
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
- (V
o
l
t
s)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
3 - 251
FZT792A
FZT792A
3 - 252
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward
Current Transfer
h
FE
300
250
200
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
Transition Frequency
f
T
100
160
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
22
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
750
ns
ns
I
C
=-500mA,
I
B1
=-50mA,
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
I
C
/I
B
=100
V
CE
=2V
I
C
/I
B
=40
V
CE
=2V
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-

(V
olt
s)
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-

(V
ol
ts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-

Norm
ali
s
ed
Gain
V
-

(V
olt
s)
750
500
250
h
-

T
y
pic
al Gai
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
- (V
o
l
t
s)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
3 - 251
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