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Datasheet: FZT758TA (Zetex Semiconductors)

PNP Low Sat Transistor

 

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Zetex Semiconductors
FZT758
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
-
(
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
-

(
V
ol
ts
)
-55C
+25C
+100C
+175C
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-

N
orm
al
i
se
d

G
ain

V
-
(
V
ol
ts
)

V
-

(
V
ol
ts
)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
300
200
100
h
-
T
y
p
ica
l Ga
in
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55C
+25C
+100C
+175C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
V
CE
=10V
0.001
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
1000V
0.001
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT658
PARTMARKING DETAIL
FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off Current
I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.30
-0.25
-0.50
V
V
V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
-0.9
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter Turn On Voltage
V
BE(on)
-1.0
V
I
C
=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
C
=-20mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
140 Typical
2000 Typical
ns
ns
I
C
=-100mA, V
CC
=-100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT758
C
C
E
B
3 - 242
3 - 243
FZT758
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
-
(
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
-

(
V
ol
ts
)
-55C
+25C
+100C
+175C
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-

N
orm
al
i
se
d

G
ain

V
-
(
V
ol
ts
)

V
-

(
V
ol
ts
)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
300
200
100
h
-
T
y
p
ica
l Ga
in
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55C
+25C
+100C
+175C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
V
CE
=10V
0.001
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
1000V
0.001
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT658
PARTMARKING DETAIL
FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off Current
I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.30
-0.25
-0.50
V
V
V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
-0.9
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter Turn On Voltage
V
BE(on)
-1.0
V
I
C
=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
C
=-20mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
140 Typical
2000 Typical
ns
ns
I
C
=-100mA, V
CC
=-100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT758
C
C
E
B
3 - 242
3 - 243
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