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Datasheet: FZT757 (Zetex Semiconductors)

Pnp Silicon Planar High Voltage Transistor

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
FEATURES
* Low saturation voltage
* 300V V
CEO
COMPLEMENTARY TYPE - FZT657
PARTMARKING DETAIL - FZT757
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-0.1
A
V
CB
=-200V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
Transition Frequency
f
T
30
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT757
FZT757
C
C
E
B
3 - 241
3 - 240
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)

V
- (
m
V
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
or
m
al
i
sed
G
ai
n
(%
)

V
- (
V
ol
ts
)

V
- (
V
ol
ts
)
Single Pulse Test at T
amb
=25C
20
40
60
80
100
100
1
150
200
250
Switching Speeds
I
C
-
Collector Current (Amps)
Swi
tc
hi
n
g ti
me
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
0.0001
0.001
1
0.01
0.1
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.0001
0.001
1
0.01
0.1
ts
s
2
1
3
4
td
tr
tf
s
0.8
0.4
1.2
1.6
0
1.4
1.0
0.6
0.2
V
CE
=5V
0
1
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
V
CE
=5V
V
CE
=10V
td
ts
tr
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
tf
1
1000
100ms
10ms
1
DC
0.001
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
s
10
100
0.01
0.1
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
FEATURES
* Low saturation voltage
* 300V V
CEO
COMPLEMENTARY TYPE - FZT657
PARTMARKING DETAIL - FZT757
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-0.1
A
V
CB
=-200V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
Transition Frequency
f
T
30
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT757
FZT757
C
C
E
B
3 - 241
3 - 240
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)

V
- (
m
V
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
or
m
al
i
sed
G
ai
n
(%
)

V
- (
V
ol
ts
)

V
- (
V
ol
ts
)
Single Pulse Test at T
amb
=25C
20
40
60
80
100
100
1
150
200
250
Switching Speeds
I
C
-
Collector Current (Amps)
Swi
tc
hi
n
g ti
me
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
0.0001
0.001
1
0.01
0.1
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.0001
0.001
1
0.01
0.1
ts
s
2
1
3
4
td
tr
tf
s
0.8
0.4
1.2
1.6
0
1.4
1.0
0.6
0.2
V
CE
=5V
0
1
0.0001
0.001
0.01
0.1
I
C
/I
B
=10
V
CE
=5V
V
CE
=10V
td
ts
tr
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
tf
1
1000
100ms
10ms
1
DC
0.001
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
s
10
100
0.01
0.1
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