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Datasheet: FZT755 (Zetex Semiconductors)

Npn Silicon Planar Medium Power Transistor

 

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Zetex Semiconductors
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
7
FEATURES
* 25 Volt V
CEO
* Low saturation voltage
* Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT655
PARTMARKING DETAIL
FZT755
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-150
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-150
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-150
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-0.1
A
V
CB
=-125V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-500mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
20
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency
f
T
30
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
FZT755
FZT755
C
C
E
B
3 - 239
3 - 238
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
t
s
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
No
r
m
al
i
sed G
ai
n
(
%)
V
-
(V
ol
ts)
V
-

(
V
ol
ts)
Single Pulse Test at T
amb
=25C
0.001
0.01
10
0.1
1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.2
0.4
0.6
0.8
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
I
+
-
Collector Current (Amps)
S
wi
tchi
ng t
im
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
td
tr
tf
s
2.0
1.0
ts
s
0.3
0.2
0.1
0.4
0.5
0
0.01
0.0001
0.001
1
0.01
0.1
0.6
0.8
1.0
1.2
V
CE
=5V
0.4
0.8
V
CE
=10V
0.1
100
100ms
10ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
s
1
10
0.1
1
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
7
FEATURES
* 25 Volt V
CEO
* Low saturation voltage
* Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT655
PARTMARKING DETAIL
FZT755
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-150
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-150
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-150
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-0.1
A
V
CB
=-125V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-500mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
20
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency
f
T
30
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
FZT755
FZT755
C
C
E
B
3 - 239
3 - 238
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
t
s
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
No
r
m
al
i
sed G
ai
n
(
%)
V
-
(V
ol
ts)
V
-

(
V
ol
ts)
Single Pulse Test at T
amb
=25C
0.001
0.01
10
0.1
1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.2
0.4
0.6
0.8
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
I
+
-
Collector Current (Amps)
S
wi
tchi
ng t
im
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
td
tr
tf
s
2.0
1.0
ts
s
0.3
0.2
0.1
0.4
0.5
0
0.01
0.0001
0.001
1
0.01
0.1
0.6
0.8
1.0
1.2
V
CE
=5V
0.4
0.8
V
CE
=10V
0.1
100
100ms
10ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
s
1
10
0.1
1
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