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Datasheet: FZT753TA (Zetex Semiconductors)

PNP High Voltagetransistor

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* Low saturation voltage
* Excellent h
FE
specified up to 2A
COMPLEMENTARY TYPE FZT653
PARTMARKING DETAIL
FZT753
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-100
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-0.1
-10
A
A
V
CB
=-100V
V
CB
=-100V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
55
25
200
200
170
55
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
140
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
30
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
600
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT753
FZT753
3 - 237
3 - 236
C
C
E
B
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)

V
-

(V
ol
t
s)
0.01
0.1
10
1
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.001
0.0001
I
+
/I
*
=10
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
-

Gai
n
0.01
0.1
1
V
+-
=2V
125
175
225
75
0
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C

V
-

(V
ol
t
s)
0.6
0.8
1.0
1.2
1.4
0.01
10
0.1
1
0.0001 0.001
I
+
/I
*
=10
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C

V
-

(V
ol
t
s)
0.6
0.8
1.0
1.2
0.4
0.01
10
0.1
1
0.0001 0.001
V
+-
=2V
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
it
c
h
i
n
g t
i
m
e
0.1
1
I
*
=I
*
=I
+
/10
t
I
t
B
t
@
t
H
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
1000
1200
400
200
600
800
1400
Single Pulse Test at T
amb
=25C
0.1
100
1s
100ms
I
+
-
Col
lect
or Curr
ent
(
A
)
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
1
10
0.1
1
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* Low saturation voltage
* Excellent h
FE
specified up to 2A
COMPLEMENTARY TYPE FZT653
PARTMARKING DETAIL
FZT753
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-100
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-0.1
-10
A
A
V
CB
=-100V
V
CB
=-100V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
55
25
200
200
170
55
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
140
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
30
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
600
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT753
FZT753
3 - 237
3 - 236
C
C
E
B
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)

V
-

(V
ol
t
s)
0.01
0.1
10
1
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.001
0.0001
I
+
/I
*
=10
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
-

Gai
n
0.01
0.1
1
V
+-
=2V
125
175
225
75
0
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C

V
-

(V
ol
t
s)
0.6
0.8
1.0
1.2
1.4
0.01
10
0.1
1
0.0001 0.001
I
+
/I
*
=10
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C

V
-

(V
ol
t
s)
0.6
0.8
1.0
1.2
0.4
0.01
10
0.1
1
0.0001 0.001
V
+-
=2V
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
it
c
h
i
n
g t
i
m
e
0.1
1
I
*
=I
*
=I
+
/10
t
I
t
B
t
@
t
H
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
1000
1200
400
200
600
800
1400
Single Pulse Test at T
amb
=25C
0.1
100
1s
100ms
I
+
-
Col
lect
or Curr
ent
(
A
)
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
1
10
0.1
1
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