HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: FZT751TA (Zetex Semiconductors)

PNP Med Power Transistor

 

Скачать: PDF   ZIP
Zetex Semiconductors
SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT651
PARTMARKING DETAIL
FZT751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
-0.1
-10
A
A
V
CB
=-60V
V
CB
=-60V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.45
0.3
0.6
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
200
200
170
150
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
140
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
ns
Output Capacitance
C
obo
30
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT751
FZT751
C
C
E
B
3 234
3 - 235
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)

V
-

(
V
olts
)
0.01
0.1
10
1
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.001
0.0001
I
C
/I
B
=10
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
-

G
ai
n
0.01
0.1
1
V
CE
=2V
125
175
225
75
0
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(
V
ol
t
s)
0.6
0.8
1.0
1.2
1.4
0.01
10
0.1
1
0.0001 0.001
I
C
/I
B
=10
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(
V
ol
ts
)
0.6
0.8
1.0
1.2
0.4
0.01
10
0.1
1
0.0001 0.001
V
CE
=2V
Switching Speeds
I
C
-
Collector Current (Amps)
S
witc
hi
ng ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
500
600
200
100
300
400
700
Single Pulse Test at T
amb
=25C
0.1
100
1s
100ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
1
10
0.1
1
SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT651
PARTMARKING DETAIL
FZT751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
-0.1
-10
A
A
V
CB
=-60V
V
CB
=-60V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.45
0.3
0.6
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
200
200
170
150
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
140
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
ns
Output Capacitance
C
obo
30
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT751
FZT751
C
C
E
B
3 234
3 - 235
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)

V
-

(
V
olts
)
0.01
0.1
10
1
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.001
0.0001
I
C
/I
B
=10
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
-

G
ai
n
0.01
0.1
1
V
CE
=2V
125
175
225
75
0
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(
V
ol
t
s)
0.6
0.8
1.0
1.2
1.4
0.01
10
0.1
1
0.0001 0.001
I
C
/I
B
=10
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(
V
ol
ts
)
0.6
0.8
1.0
1.2
0.4
0.01
10
0.1
1
0.0001 0.001
V
CE
=2V
Switching Speeds
I
C
-
Collector Current (Amps)
S
witc
hi
ng ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
500
600
200
100
300
400
700
Single Pulse Test at T
amb
=25C
0.1
100
1s
100ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
1
10
0.1
1
© 2018 • ChipFind
Контакты
Главная страница