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Datasheet: FZT749/TA (Zetex Semiconductors)

PNP Med Power Transistor

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT649
PARTMARKING DETAIL
FZT749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-35
V
I
C
=-100
A
V
(BR)CEO
-25
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Currents
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100C
I
EBO
-0.1
A
V
EB
=4V
Saturation Voltages
V
CE(sat)
-0.12
-0.40
-0.3
-0.6
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
160
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
55
100
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT749
FZT749
C
C
E
B
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-
(
V
ol
t
s)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
G
ai
n
V
-
(V
o
l
t
s)
V
-
(
V
ol
t
s)
I
-
Co
ll
ecto
r Cu
rre
n
t (Am
p
s)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
10
100
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
40
80
120
160
200
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
i
tchi
n
g
ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.001
1
0.01
0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V
CE
=2V
I
C
/I
B
=10
V
CE
=2V
V
CE
=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
0.001
1
0.01
0.1
10
I
C
/I
B
=100
0.001
1
0.01
0.1
10
0
1.2
1.6
1.8
1.4
I
C
/I
B
=100
I
C
/I
B
=10
0.001
1
0.01
0.1
10
10
10
D.C.
1s
100ms
10ms
1.0ms
100
s
3 - 232
3 - 233
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT649
PARTMARKING DETAIL
FZT749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-35
V
I
C
=-100
A
V
(BR)CEO
-25
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Currents
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100C
I
EBO
-0.1
A
V
EB
=4V
Saturation Voltages
V
CE(sat)
-0.12
-0.40
-0.3
-0.6
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
160
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
55
100
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT749
FZT749
C
C
E
B
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-
(
V
ol
t
s)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
G
ai
n
V
-
(V
o
l
t
s)
V
-
(
V
ol
t
s)
I
-
Co
ll
ecto
r Cu
rre
n
t (Am
p
s)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1
10
100
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
40
80
120
160
200
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
i
tchi
n
g
ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.001
1
0.01
0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V
CE
=2V
I
C
/I
B
=10
V
CE
=2V
V
CE
=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
0.001
1
0.01
0.1
10
I
C
/I
B
=100
0.001
1
0.01
0.1
10
0
1.2
1.6
1.8
1.4
I
C
/I
B
=100
I
C
/I
B
=10
0.001
1
0.01
0.1
10
10
10
D.C.
1s
100ms
10ms
1.0ms
100
s
3 - 232
3 - 233
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