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Datasheet: FZT705TA (Zetex Semiconductors)

PNP Low Sat Transistor

 

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Zetex Semiconductors
SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 - OCTOBER 1995
FEATURES
* 2A CONTINUOUS CURRENT
* FAST SWITCHING
* GUARANTEED HFE SPECIFIED UP TO 2A
COMPLEMENTARY TYPE FZT 605
PART MARKING DETAIL
FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-4
A
Continuous Collector Current
I
C
-2
A
Power Dissipation
P
TOT
2
W
Operating and Storage Temperature Range
tj:tstg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-140
V
I
C
=-100mA
V
(BR)CEO
-120
V
I
C
=-10mA*
V
(BR)EBO
-10
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
A
A
V
CB
=-120V
V
CB
=-120V, T
amb
=100C
I
CES
-10
A
V
CES
=-80V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-8V
SaturationVoltages
V
CE(sat)
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA
I
C
=-2A, I
B
=-2mA
V
BE(sat)
-1.8
V
I
C
=-1A, I
B
=-10mA
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.7
V
I
C
=-1A, V
CE
=-5V
Static Forward Current
Transfer
h
FE
3000
3000
3000
2000
30000
I
C
=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-1A, V
CE
=-5V
I
C
=-2A, V
CE
=-5V
Transitional
Frequency
f
T
160
MHz
I
C
=-100mA, V
CE
=-10V
f=20MHz
Output Capacitance
C
obo
15
pF
V
EB
=-10V, f=1MHz
Switching Times
T
on
0.6
s
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=0.5mA
T
off
0.8
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT705
C
C
E
B
3 - 230
FZT704
FZT705
FZT705
FZT704
3 - 231
0.01
0.1
20
1
10
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-

(V
o
l
ts
)
0.001
0.01
0.1
20
1
10
10k
8k
6k
4k
0
2k
16k
14k
12k
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
-

Gai
n
V
CE
=-5V
0.001
0.01
0.1
20
1
10
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-

(V
o
l
ts
)
I
C
/I
B
=1000
0.001
0.01
0.1
20
1
10
0.8
0.6
1.8
2.4
2.2
2.0
-55C
+25C
+100C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C

V
-

(V
o
l
ts
)
V
CE
=-5V
0.001
1.0
0.8
0.6
0.4
1.6
1.4
1.2
1.8
1.0
0.8
0.6
0.4
1.6
1.4
1.2
1.8
1.0
1.6
1.4
1.2
I
C
/I
B
=1000
-55C
+25C
+100C
+175C
0.2
0.2
V
CE
- Collector Voltage (Volts)
V
CE
- Collector Voltage (Volts)
Safe Operating Area
Safe Operating Area
1
10
100
1000
0.1
1
10
D.C.
100ms
10ms
1.0ms
100
s
1s
10
1
0.1
1
10
100
1000
Single Pulse Test at T
amb
=25 C
Single Pulse Test at T
amb
=25 C
D.C.
100ms
10ms
1.0ms
100
s
1s
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