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Datasheet: FZT696B (Zetex Semiconductors)

Npn Silicon Planar Medium Power High Gain Transistor

 

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Zetex Semiconductors
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 FEBRUARY 1997
FEATURES
* 250 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL
FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
180
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
180
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
180
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=140V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.2
0.2
0.25
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.9
V
I
C
=200mA, I
B
=5mA*
Base-Emitter Turn-OnVoltage
V
BE(on)
0.9
V
I
C
=200mA, V
CE
=5V*
Static Forward Current Transfer
Ratio
h
FE
500
150
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
Transition Frequency
f
T
70
MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
6
pF
V
CE
=10V, f=1MHz
Switching Times
t
on
t
off
80
4400
ns
ns
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT696B
FZT696B
3 - 227
C
C
E
B
3 - 228
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- No
r
m
a
l
i
se
d

Ga
in
V
- (V
o
l
ts)
V
- (V
o
l
ts)
1.5K
1K
500
h
- T
yp
i
ca
l
Ga
i
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
V
CE
=5V
I
C
/I
B
=50
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=100
I
C
/I
B
=50
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
1000V
0.001
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 FEBRUARY 1997
FEATURES
* 250 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL
FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
180
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
180
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
180
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=140V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.2
0.2
0.25
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.9
V
I
C
=200mA, I
B
=5mA*
Base-Emitter Turn-OnVoltage
V
BE(on)
0.9
V
I
C
=200mA, V
CE
=5V*
Static Forward Current Transfer
Ratio
h
FE
500
150
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
Transition Frequency
f
T
70
MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
6
pF
V
CE
=10V, f=1MHz
Switching Times
t
on
t
off
80
4400
ns
ns
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT696B
FZT696B
3 - 227
C
C
E
B
3 - 228
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- No
r
m
a
l
i
se
d

Ga
in
V
- (V
o
l
ts)
V
- (V
o
l
ts)
1.5K
1K
500
h
- T
yp
i
ca
l
Ga
i
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
V
CE
=5V
I
C
/I
B
=50
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=100
I
C
/I
B
=50
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
1000V
0.001
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