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Datasheet: FZT690B (Zetex Semiconductors)

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

 

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Zetex Semiconductors
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; R
CE(sat)
125m
at 2A
* Gain of 400 at I
C
=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
45
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX
.
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
45
V
I
C
=100
A
Collector-EmitterBreakdown V
(BR)CEO
45
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.1
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
50
I
C
=100mA,V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
Transition Frequency
f
T
150
MHz I
C
=50mA,V
CE
=5V,f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
33
1300
ns
ns
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT690B
FZT690B
3 - 221
C
C
E
B
3 - 222
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
- (V
ol
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
- (V
ol
ts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- N
orm
al
i
se
d
G
ai
n

V
- (V
ol
ts)

V
- (V
ol
ts)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
- T
yp
i
ca
l Gai
n
T
amb
=25C
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
I
C
/I
B
=100
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; R
CE(sat)
125m
at 2A
* Gain of 400 at I
C
=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
45
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX
.
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
45
V
I
C
=100
A
Collector-EmitterBreakdown V
(BR)CEO
45
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.1
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
50
I
C
=100mA,V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
Transition Frequency
f
T
150
MHz I
C
=50mA,V
CE
=5V,f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
33
1300
ns
ns
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT690B
FZT690B
3 - 221
C
C
E
B
3 - 222
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
- (V
ol
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)

V
- (V
ol
ts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- N
orm
al
i
se
d
G
ai
n

V
- (V
ol
ts)

V
- (V
ol
ts)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
- T
yp
i
ca
l Gai
n
T
amb
=25C
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
I
C
/I
B
=100
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
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