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Datasheet: FXT458 (Zetex Semiconductors)

Npn Silicon Planar Medium Power High Voltage Transistor

 

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Zetex Semiconductors
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 SEPTEMBER 1994
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
REFER TO ZTX458 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
300
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off
Current
I
CES
100
nA
VCE=320V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=50mA, I
B
=5mA
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
IC=50mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
Transition Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-35
FXT458
B
C
E
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