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Datasheet: FMV2104 (Zetex Semiconductors)

Sot23 Silicon Planar Variable Capacitance Diodes

 

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Zetex Semiconductors
!
1
3
2
SOT23
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 JANUARY 1996
7
PIN CONFIGURATION
PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Reverse Voltage
V
R
30
V
Forward Current
I
F
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
BR
30
V
I
R
= 10
A
Reverse current
I
R
20
nA
V
R
= 25V
Series Inductance
L
S
3.0
nH
f=250MHz
Lead length
1.5mm
Diode Capacitance
Temperature Coefficient
T
CC
280
400
ppm/ C V
R
= 4V, f=1MHz
Lead length
1.5mm
Case Capacitance
C
C
0.15
pF
f=1MHz
TUNING CHARACTERISTICS (at T
amb
= 25C).
Type No.
Nominal Capacitance (pF)
V
R
= 4V, f=1MHz
Q Figure of MERIT
V
R
= 4V, f=50MHz
Turning Ratio
C
2
/ C
30
f=1MHz
Partmark
Detail
Min.
Nom.
Max.
Min.
Max.
FMMV2101
6.1
6.8
7.5
450
2.5
3.3
6R
FMMV2103
9.0
10.0
11.0
400
2.6
3.3
6G
FMMV2104
10.8
12.0
13.2
400
2.6
3.3
6H
FMMV2105
13.5
15.0
16.5
400
2.6
3.3
6J
FMMV2107
19.8
22.0
24.2
350
2.7
3.3
6L
FMMV2108
24.3
27.0
29.7
300
2.7
3.3
6M
FMMV2109
29.3
33.0
36.3
280
2.7
3.3
6N
* SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
FMMV2101
to
FMMV2109
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