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Datasheet: BCV49 (Zetex Semiconductors)

Npn Silicon Planar Darlington Transistor

 

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Zetex Semiconductors
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 SEPTEMBER 1995
COMPLEMENTARY TYPE
BCV48
PARTMARKING DETAILS
EG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
800
mA
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
A
Collector Cut-Off
Current
I
CBO
100
10
nA
A
V
CB
=60V
V
CB
=60V, T
amb
=150C
Emitter Cut-Off Current I
EBO
100
nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
1
V
I
C
=100mA, I
B
=0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.5
V
I
C
=100mA, I
B
=0.1mA*
Static Forward Current
Transfer Ratio
h
FE
2000
4000
10000
2000
I
C
=100
A, V
CE
=1V
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Transition Frequency
f
T
170
MHz
I
C
=50mA, V
CE
=5V
f = 20MHz
Output Capacitance
C
obo
3.5
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For
typical
graphs
see
FMMT38A
datasheet
Periodic
Sample
Test
Only.
Spice parameter data is available upon request for this device
BCV49
C
C
B
E
SOT89
3 - 26
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