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Datasheet: BCV47 (Zetex Semiconductors)

NPN SILICON PLANAR DARLINGTON TRANSISTORS

 

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Zetex Semiconductors
SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995
7
FEATURES
* High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPES BCV27 BCV28
BCV47 BCV48
PARTMARKING DETAILS
BCV27 ZFF
BCV47 ZFG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCV27
BCV47
UNIT
Collector-Base Voltage
V
CBO
40
80
V
Collector-Emitter Voltage
V
CEO
30
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
800
mA
Continuous Collector Current
I
C
500
mA
Base Current
I
B
100
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
BCV27
BCV47
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
10
V
I
E
=10
A
Collector Cut-Off
Current
I
CBO
100
10
100
10
nA
nA
A
A
V
CB
= 30V
V
CB
= 60V
V
CB
=30V,T
amb
=150
o
C
V
CB
=60V,T
amb
=150
o
C
Emitter Base
Cut-Off Current
I
EBO
100
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.0
1.0
V
I
C
=100mA,I
B
=0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.5
1.5
V
I
C
=100mA,I
B
=0.1mA*
Static Forward Current
Transfer Ratio
h
FE
4K
10K
20K
4K
2K
4K
10K
2K
I
C
=100
A, V
CE
=1V
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Transition Frequency
f
T
170 Typical
170 Typical
MHz
I
C
=50mA, V
CE
=5V
f = 20MHz
Output Capacitance
C
obo
3.5 Typical
3.5 Typical
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Periodic Sample Test Only. For typical graphs see FMMT38A datasheet
BCV27
BCV47
C
B
E
SOT23
3 - 22
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