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Datasheet: BCV26 (Zetex Semiconductors)

Pnp Silicon Planar Darlington Transistors

 

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Zetex Semiconductors
SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE BCV26 - BCV27
BCV46 - BCV47
PARTMARKING DETAILS
BCV26 - ZFD
BCV46 - ZFE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCV26
BCV46
UNIT
Collector-Base Voltage
V
CBO
-40
-80
V
Collector-Emitter Voltage
V
CEO
-30
-60
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-800
mA
Continuous Collector Current
I
C
-500
mA
Base Current
I
B
-100
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
BCV26
BCV46
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-40
-80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
-60
V
I
C
=10mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10
-10
V
I
E
=10
A
Collector Cut-Off
Current
I
CBO
-100
-10
-100
-10
nA
nA
A
A
V
CB
= -30V
V
CB
= -60V
V
CB
=-30V,T
amb
=150
o
C
V
CB
=-60V,T
amb
=150
o
C
Emitter Base
Cut-Off Current
I
EBO
-100
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.0
-1.0
V
I
C
=-100mA,I
B
=-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.5
-1.5
V
I
C
=-100mA,I
B
=-0.1mA*
Static Forward Current
Transfer Ratio
h
FE
4K
10K
20K
4K
2K
4K
10K
2K
I
C
=-100
,
V
CE
=-1V
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
Transition Frequency
f
T
200 Typical
200 Typical
MHz I
C
=-50mA, V
CE
=-5V
f = 20MHz
Output Capacitance
C
obo
4.5 Typical
4.5 Typical
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices Periodic Sample Test Only.
BCV26
BCV46
C
B
E
3 - 21
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