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Datasheet: BCP68-25 (Zetex Semiconductors)

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

 

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Zetex Semiconductors
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE BCP69
PARTMARKING DETAIL
BCP68
BCP68 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
25
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
25
V
I
C
=10
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
V
I
C
= 30mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
A
Collector Cut-Off
Current
I
CBO
100
10
nA
A
V
CB
=25V
V
CB
=25V, T
amb
=150C
Emitter Cut-Off Current I
EBO
10
A
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.6
1.0
V
V
I
C
=5A, V
CE
=10V*
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BCP68
BCP68-25
50
63
160
250
400
400
I
C
=5mA, V
CE
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
100
MHz
I
C
=100mA, V
CE
=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT449 datasheet.
BCP68
C
C
E
B
3 - 19
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