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Datasheet: BC868-CAC (Zetex Semiconductors)

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

 

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Zetex Semiconductors
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - OCTOBER 1995
7
FEATURES
*
SUITABLE FOR GENERAL AF APPLICATIONS AND
CLASS B AUDIO OUTPUT STAGES UPTO 3W
*
HIGH h
FE
AND LOW SATURATION VOLTAGE
COMPLEMENTARY TYPE -
BC869
PARTMARKING DETAILS
BC868 - CAC
BC868-16 - CCC
BC868-25 - CDC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
25
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
25
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
A
Collector Cut-Off
Current
I
CBO
10
1
A
mA
V
CB
= 25V
V
CB
= 25V,T
amb
=150
o
C
Emitter Cut-Off Current
I
EBO
10
A
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BC868-16
BC868-25
50
85
60
100
160
375
250
375
I
C
=5mA, V
CE
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
60
MHz
I
C
=10mA, V
CE
=5V
f = 35MHz
Output Capacitance
C
obo
45
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT449 datasheet.
BC868
3 - 11
C
C
B
E
SOT89
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