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Datasheet: BC849A (Zetex Semiconductors)

SOT23 NPN SILICON PLANAR

 

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Zetex Semiconductors
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
COMPLEMENTARY TYPES
BC846AZ1A
BC848B1K
BC846
BC856
BC846B1B
BC848CZ1L
BC847
BC857
BC847AZ1E
BC849B2B
BC848
BC858
BC847B1F
BC849C2C
BC849
BC859
BC847C1GZ
BC850B2FZ
BC850
BC860
BC848A1JZ
BC850C-Z2G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC846
BC847
BC848
BC849
BC850
UNIT
Collector-Base Voltage
V
CBO
80
50
30
30
50
V
Collector-Emitter Voltage
V
CES
80
50
30
30
50
V
Collector-Emitter Voltage
V
CEO
65
45
30
30
45
V
Emitter-Base Voltage
V
EBO
6
5
V
Continuous Collector Current
I
C
100
mA
Peak Collector Current
I
CM
200
mA
Peak Base Current
I
BM
200
mA
Peak Emitter Current
I
EM
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage
Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Collector Cut-Off Current I
CBO
Max
15
nA V
CB
= 30V
Max
5
A
V
CB
= 30V
T
amb
=150C
Collector-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
90
250
mV
mV
I
C
=10mA,
I
B
=0.5mA
Typ
Max.
200
600
mV
mV
I
C
=100mA,
I
B
=5mA
Typ
Max.
300
600
mV
mV
I
C
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
Typ
700
mV
I
C
=10mA,
I
B
=0.5mA
Typ
900
mV
I
C
=100mA,
I
B
=5mA
Base-Emitter Voltage
V
BE
Min
Typ
Max
580
660
700
mV
mV
mV
I
C
=2mA
V
CE
=5V
Max
770
mV
I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
BC846 BC847
BC848 BC849
BC850
C
B
E
SOT23
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Dynamic
Group
VI
Characteristics
Group A
Group B
Group C
h
ie
Min
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
k
k
k
V
CE
=5V
Ic=2mA
Min
Typ
Max
1.6
2.7
4.5
1.6
2.7
4.5
1.6
2.7
4.5
k
k
k
Min
Typ
Max
3.2
4.5
8.5
k
k
k
Min
Typ
Max
6
8.7
15
6
8.7
15
6
8.7
15
k
k
k
Group VI
Group A
Group B
Group C
h
re
Typ
Typ
Typ
Typ
2.5
1.5
2
2.5
1.5
2
2.5
1.5
2
3
2
3
2
3
x10
-4
x10
-4
x10
-4
x10
-4
Group VI
Group A
Group B
Group C
h
fe
Min
Typ
Max
75
110
150
75
110
150
75
110
150
Min
Typ
Max
125
220
260
125
220
260
125
220
260
Min
Typ
Max
240
330
500
Min
Typ
Max
450
600
900
450
600
900
450
600
900
450
600
900
Group VI
h
oe
Typ
Max
20
40
20
40
20
40
s
s
Group A
Typ
Max
18
30
18
30
18
30
s
s
Group B
Typ
Max
30
60
s
s
Group C
Typ
Max
60
110
60
110
60
110
s
s
BC846 BC847
BC848 BC849
BC850
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Static Group
VI
Forward
Current Ratio
h
FE
Min
Typ
Max
75
110
150
75
110
150
75
110
150
I
C
=2mA, V
CE
=5V
Group A
h
FE
Typ 90
90
90
I
C
=0.01mA, V
CE
=5V
Min
Typ
Max
110
180
220
110
180
220
110
180
220
I
C
=2mA, V
CE
=5V
Typ 120
120
120
I
C
=100mA, V
CE
=5V
Group B
h
FE
Typ
150
I
C
=0.01mA, V
CE
=5V
Min
Typ
Max
200
290
450
I
C
=2mA, V
CE
=5V
Typ 200
200
200
I
C
=100mA, V
CE
=5V
Group C
h
FE
Typ.
270
270
270
270
I
C
=0.01mA, V
CE
=5V
Min
Typ
Max
420
500
800
420
500
800
420
500
800
420
500
800
I
C
=2mA, V
CE
=5V
Typ
400
I
C
=100mA, V
CE
=5V
Transition Frequency
f
T
Typ
300
MHz I
C
=10mA, V
CE
=5V
f=100MHz
Collector-Base
Capacitance
C
obo
Typ
Max
2.5
4.5
pF
pF
V
CB
=10V f=1MHz
Emitter-Base
Capacitance
C
ib0
Typ
9
pF
V
EB
=0.5V f=1MHz
Noise Figure
N
Typ
Max
2
10
2
10
2
10
1.2
4
1
4
dB
dB
V
CE
= 5V, I
C
=200
A,
R
G
=2k
, f=1kHz,
f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
V
CE
= 5V, I
C
=200
A,
R
G
=2k
, f=30Hz to
15kHz at -3dB
points
Equivalent Noise
Voltage
e
n
Max.
110
110
nV
V
CE
= 5V,
I
C
=200
A,
R
G
=2k
, f=10Hz to
50Hz at -3dB
points
BC846 BC847
BC848 BC849
BC850
Spice parameter data is available upon request for this device
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Dynamic
Group
VI
Characteristics
Group A
Group B
Group C
h
ie
Min
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
k
k
k
V
CE
=5V
Ic=2mA
Min
Typ
Max
1.6
2.7
4.5
1.6
2.7
4.5
1.6
2.7
4.5
k
k
k
Min
Typ
Max
3.2
4.5
8.5
k
k
k
Min
Typ
Max
6
8.7
15
6
8.7
15
6
8.7
15
k
k
k
Group VI
Group A
Group B
Group C
h
re
Typ
Typ
Typ
Typ
2.5
1.5
2
2.5
1.5
2
2.5
1.5
2
3
2
3
2
3
x10
-4
x10
-4
x10
-4
x10
-4
Group VI
Group A
Group B
Group C
h
fe
Min
Typ
Max
75
110
150
75
110
150
75
110
150
Min
Typ
Max
125
220
260
125
220
260
125
220
260
Min
Typ
Max
240
330
500
Min
Typ
Max
450
600
900
450
600
900
450
600
900
450
600
900
Group VI
h
oe
Typ
Max
20
40
20
40
20
40
s
s
Group A
Typ
Max
18
30
18
30
18
30
s
s
Group B
Typ
Max
30
60
s
s
Group C
Typ
Max
60
110
60
110
60
110
s
s
BC846 BC847
BC848 BC849
BC850
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Static Group
VI
Forward
Current Ratio
h
FE
Min
Typ
Max
75
110
150
75
110
150
75
110
150
I
C
=2mA, V
CE
=5V
Group A
h
FE
Typ 90
90
90
I
C
=0.01mA, V
CE
=5V
Min
Typ
Max
110
180
220
110
180
220
110
180
220
I
C
=2mA, V
CE
=5V
Typ 120
120
120
I
C
=100mA, V
CE
=5V
Group B
h
FE
Typ
150
I
C
=0.01mA, V
CE
=5V
Min
Typ
Max
200
290
450
I
C
=2mA, V
CE
=5V
Typ 200
200
200
I
C
=100mA, V
CE
=5V
Group C
h
FE
Typ.
270
270
270
270
I
C
=0.01mA, V
CE
=5V
Min
Typ
Max
420
500
800
420
500
800
420
500
800
420
500
800
I
C
=2mA, V
CE
=5V
Typ
400
I
C
=100mA, V
CE
=5V
Transition Frequency
f
T
Typ
300
MHz I
C
=10mA, V
CE
=5V
f=100MHz
Collector-Base
Capacitance
C
obo
Typ
Max
2.5
4.5
pF
pF
V
CB
=10V f=1MHz
Emitter-Base
Capacitance
C
ib0
Typ
9
pF
V
EB
=0.5V f=1MHz
Noise Figure
N
Typ
Max
2
10
2
10
2
10
1.2
4
1
4
dB
dB
V
CE
= 5V, I
C
=200
A,
R
G
=2k
, f=1kHz,
f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
V
CE
= 5V, I
C
=200
A,
R
G
=2k
, f=30Hz to
15kHz at -3dB
points
Equivalent Noise
Voltage
e
n
Max.
110
110
nV
V
CE
= 5V,
I
C
=200
A,
R
G
=2k
, f=10Hz to
50Hz at -3dB
points
BC846 BC847
BC848 BC849
BC850
Spice parameter data is available upon request for this device
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