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Datasheet: BC80725-5BZ (Zetex Semiconductors)

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

 

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Zetex Semiconductors
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 MARCH 2001
PARTMARKING DETAILS
BC80716
5AZ
BC80725
5BZ
BC80740
5CZ
COMPLEMENTARY TYPE
BC817
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-500
mA
Base Current
I
B
-100
mA
Peak Base Current
I
BM
-200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector Cut-Off
Current
I
CBO
-0.1
-0.5
A
V
CB
=-20V, I
E
=0
V
CB
=-20V, I
E
=0, T
amb
=150C
Emitter Cut-Off Current I
EBO
-10
A
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-700
mV
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(on)
-1.2
V
I
C
=-500mA, V
CE
=-1V*
Static Forward Current
Transfer Ratio
h
FE
BC80716
100
250
I
C
=-100mA, V
CE
=-1V*
BC80725
160
400
I
C
=-100mA, V
CE
=-1V*
BC80740
250
600
I
C
=-100mA, V
CE
=-1V*
All bands
40
I
C
=-500mA, V
CE
=-1V*
Transition Frequency
f
T
100
MHz
I
C
=-10mA, V
CE
=-5V
f=35MHz
Output Capacitance
C
obo
8.0
pF
V
CB
=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
BC807
C
B
E
SOT23
tba
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