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Datasheet: BBY31 (Zetex Semiconductors)

Silicon Planar Variable Capacitance Diode

 

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Zetex Semiconductors
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 JANUARY 1998
PIN CONFIGURATION
PARTMARKING DETAIL
BBY31 S1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
BR
28.0
V
I
R
= 10
A
Reverse current
I
R
10
1.0
nA
A
V
R
= 28V
V
R
= 28V, T
amb
= 85C
TUNING CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Diode Capacitance
C
d
1.8
17.5
11.5
2.8
pF
pF
pF
V
R
= 1V, f=1MHz
V
R
= 3V, f=1MHz
V
R
= 25V, f=1MHz
Capacitance Ratio
C
d
/ C
d
5.0
V
R
= 3V/25V, f=1MHz
Series Resistance
r
d
1.2
f=470MHz at the value
of V
R
at which C
d
=9pF
Spice parameter data is available upon request for this device
BBY31
1
3
2
SOT23
1
3
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