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Datasheet: BAT54A (Zetex Semiconductors)

SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

 

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Zetex Semiconductors
SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995 7
FEATURES
: Low
V
F
& High Current Capability
APPLICATIONS
: PSU,
Mobile
Telecomms
&
SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
30
V
Forward Current
I
F
200
mA
Forward Voltage @ I
F
=10mA
V
F
400
mV
Repetitive Peak Forward Current
I
FRM
300
mA
Non Repetitive Forward Current t<1s
I
FSM
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Storage Temperature Range
T
stg
-55 to +150
C
JunctionTemperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
30
50
V
I
R
=10
A
Forward Voltage
V
F
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
I
R
2.5
4
A
V
R
=25V
Diode Capacitance
C
D
7.5
10
pF
f=1MHz,V
R
=1V
Reverse Recover
Time
t
rr
5
ns
switched from
I
F
=10mA to I
R
=10mA
R
L
=100
, Measured
at I
R
=1mA
Dual Device; For simultaneous continuous use T
j
=100C.
3
2
1
3
2
1
2
3
1
3
1
BAT54 SERIES
1
3
2
BAT54
BAT54A
BAT54S
BAT54C
Device Type
SINGLE
COMMON
ANODE
SERIES
COMMON
CATHODE
Pin Configuration
L4Z
L42
L44
L43
Partmarking Detail
30
10
20
0
+125C
+85C
TA - Ambient Temperature ( C)
PD v TA Characteristics
0
90
180
270
330
CT v VR Characteristics
0
5
10
15
0
50
100
150
Forward Voltage V
F
(V)
IF v VF Characteristics
0
0.6
0.3
+125C
10
100
1m
10m
100m
1
0.9
+85C
+25C
0.15
0.45
0.75
10
100
10m
1m
Reverse Voltage V
R
(V)
I
R
v V
R
Characteristics
Reverse Voltage VR (V)
0
20
10
30
1
+25C
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 4
3 - 5
SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995 7
FEATURES
: Low
V
F
& High Current Capability
APPLICATIONS
: PSU,
Mobile
Telecomms
&
SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
30
V
Forward Current
I
F
200
mA
Forward Voltage @ I
F
=10mA
V
F
400
mV
Repetitive Peak Forward Current
I
FRM
300
mA
Non Repetitive Forward Current t<1s
I
FSM
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Storage Temperature Range
T
stg
-55 to +150
C
JunctionTemperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
30
50
V
I
R
=10
A
Forward Voltage
V
F
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
I
R
2.5
4
A
V
R
=25V
Diode Capacitance
C
D
7.5
10
pF
f=1MHz,V
R
=1V
Reverse Recover
Time
t
rr
5
ns
switched from
I
F
=10mA to I
R
=10mA
R
L
=100
, Measured
at I
R
=1mA
Dual Device; For simultaneous continuous use T
j
=100C.
3
2
1
3
2
1
2
3
1
3
1
BAT54 SERIES
1
3
2
BAT54
BAT54A
BAT54S
BAT54C
Device Type
SINGLE
COMMON
ANODE
SERIES
COMMON
CATHODE
Pin Configuration
L4Z
L42
L44
L43
Partmarking Detail
30
10
20
0
+125C
+85C
TA - Ambient Temperature ( C)
PD v TA Characteristics
0
90
180
270
330
CT v VR Characteristics
0
5
10
15
0
50
100
150
Forward Voltage V
F
(V)
IF v VF Characteristics
0
0.6
0.3
+125C
10
100
1m
10m
100m
1
0.9
+85C
+25C
0.15
0.45
0.75
10
100
10m
1m
Reverse Voltage V
R
(V)
I
R
v V
R
Characteristics
Reverse Voltage VR (V)
0
20
10
30
1
+25C
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 4
3 - 5
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