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Datasheet: BAS70-06 (Zetex Semiconductors)

SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES

 

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Zetex Semiconductors
SOT23 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 3 - JULY 1995
7
.
SERIES PAIR
COMMON CATHODE
COMMON ANODE
Device Type: BAS70-04
Device Type: BAS70-05
Device Type: BAS70-06
Partmarking Detail: 2Z
Partmarking Detail: 2Z5 Partmarking Detail: 1Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Breakdown Voltage
V
BR
70
V
I
R
=10
A
Reverse Leakage Current I
R
200
nA
V
R
=50V
Forward Voltage
V
F
410
mV
I
F
=1mA
Forward Current
I
F
15
mA
V
F
=1V
Capacitance
C
T
2.0
pF
f=1MHz, V
R
=0
Effective Minority Lifetime
(1)
100
ps
f=54MHz, I
pk
= 20mA
(Krakauer Test Method)
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
1
3
2
SOT23
BAS70-04
BAS70-05
BAS70-06
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2
3
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3
2
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