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Datasheet: 3A17D (Zetex Semiconductors)

DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET

 

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Zetex Semiconductors
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.070 ; I
D
= -4.4A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor Drive
LCD backlighting
DEVICE MARKING
ZXMP
3A17D
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
1
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A17DN8TA
7'`
12mm
500 units
ZXMP3A17DN8TC
13'`
12mm
2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
100
C/W
Junction to Ambient (b)(e)
R
JA
70
C/W
Junction to Ambient (b)(d)
R
JA
60
C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C (b)(d)
@V
GS
=10V; T
A
=70 C (b)(d)
@V
GS
=10V; T
A
=25 C (a)(d)
I
D
-4.4
-3.6
-3.4
A
A
A
Pulsed Drain Current (c)
I
DM
-16.2
A
Continuous Source Current (Body Diode)(b)
I
S
-2.5
A
Pulsed Source Current (Body Diode)(c)
I
SM
-16.2
A
Power Dissipation at TA=25C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at TA=25C (a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at TA=25C (b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
3
100m
1
10
10m
100m
1
10
Single Pulse
T
amb
=25C
One active die
R
DS(on)
Limited
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
0
20
40
60
80
100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Two active die
One active die
Derating Curve
Temperature (C)
M
a
x
Pow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
100
1m
10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
80
90
100
110
T
amb
=25C
One active die
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(

C
/
W
)
Pulse Width (s)
100
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25C
One active die
Pulse Power Dissipation
Pulse Width (s)
Ma
x
i
mu
m
P
o
w
e
r
(
W
)
CHARACTERISTICS
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.070
0.110
V
GS
=-10V, I
D
=-3.2A
V
GS
=-4.5V, I
D
=-2.5A
Forward Transconductance (1)(3)
g
fs
6.4
S
V
DS
=-15V,I
D
=-3.2A
DYNAMIC (3)
Input Capacitance
C
iss
630
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
113
pF
Reverse Transfer Capacitance
C
rss
78
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
1.74
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0
, V
GS
=-10V
Rise Time
t
r
2.87
ns
Turn-Off Delay Time
t
d(off)
29.2
ns
Fall Time
t
f
8.72
ns
Gate Charge
Q
g
8.28
nC
V
DS
=-15V,V
GS
=-5V,
I
D
=-3.2A
Total Gate Charge
Q
g
15.8
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-3.2A
Gate-Source Charge
Q
gs
1.84
nC
Gate-Drain Charge
Q
gd
2.80
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.85
-1.2
V
T
J
=25C, I
S
=-2.5A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
19.5
ns
T
J
=25C, I
F
=-1.7A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
16.3
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
5
0.1
1
10
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
1
2
3
4
0.1
1
10
-50
0
50
100
150
0.6
0.8
1.0
1.2
1.4
0.1
1
10
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
5V
10V
4V
3.5V
-V
GS
2.5V
2V
3V
Output Characteristics
T = 25C
-V
GS
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
5V
4V
3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
-V
DS
= 10V
T = 25C
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= -10V
I
D
= -3.2A
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
N
o
rm
a
lis
e
d
R
DS
(
o
n
)
an
d
V
GS
(
t
h
)
Tj Junction Temperature (C)
5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 25C
-V
GS
R
DS
(
o
n
)
D
r
a
i
n-
Sour
c
e
O
n
-
R
e
s
i
s
t
a
nc
e
(
)
-I
D
Drain Current (A)
T = 150C
T = 25C
Source-Drain Diode Forward Voltage
-V
SD
Source-Drain Voltage (V)
-I
SD
R
ever
se
D
r
ai
n
C
u
r
r
e
n
t
(
A
)
TYPICAL CHARACTERISTICS
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