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Datasheet: FH101 (WJ Communications)

High Dynamic Range Fet

 

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WJ Communications
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
April 2004
FH101
Product Description
The FH101 is a high dynamic range FET packaged
in a low cost surface mount package. The device is
available in both the standard SOT-89 package
and the environmentally friendly lead-free and
"green" SOT-89 package. The combination of low
noise figure and high output IP3 at the same bias
point makes it ideal for receiver and transmitter
applications. The FH101 achieves +36 dBm OIP3
at a mounting temperature of 85C with an associ-
ated MTBF of >100 years. The package is a SOT-
89. All devices are 100% RF and DC tested.
The product is targeted for applications where high
linearity is required.
Product Features
50-3000 MHz Bandwidth
+
36 dBm Output IP3
1.2 dB Noise Figure
18 dB Gain
+
18 dBm P1dB
Single or Dual Supply Operation
MTBF >100 Years
SOT-89 SMT Package
Functional Diagram
4
1
2
3
Function Pin No.
Gate
1
Source
2
Drain
3
Source
4
High Dynamic Range FET
Product Information
Ordering Information
Part No.
Description
FH101
High Dynamic Range FET (leaded)
1
FH101-G
High Dynamic Range FET (lead-free)
2
1 Product may contain lead-bearing materials. Maximum +235C reflow temperature.
2 Product does not contain lead-bearing materials. Maximum +260C reflow temperature. Also
compatible with leaded soldering process.
The Communications Edge
TM
Absolute Maximum Ratings
Parameter
Rating
Drain to Source Voltage
+6.0 V
Gate to Source Voltage
-6.0 V
Gate Current
4.5 mA
Operating Case Temperature
-40 to +85C
Storage Temperature
-55 to +125C
Input RF Power (continuous)
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Specifications
DC Electrical Parameter Units
Min.
Typical Max.
Saturated Drain Current, Idss mA
100
140
170
Transconductance, Gm
mS
120
Pinch Off Voltage, Vp
V
-3.0
-1.5
RF Parameter
Units
Min.
Typical Max.
Small Signal Gain, Gss
dB
17
18
Max Stable Gain, Gmsg
dB
23
Output IP3
dBm
32
36
Output P1dB
dBm
18
Noise Figure, NF
7
dB 1.2
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Device needs appropriate match to become unconditionally stable.
4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40C is +36 dBm.
5. Idss is measured with Vgs = 0 V.
6. Pinch off voltage is measured when Ids = 0.6 mA.
7. Measured with Vds = 3.3 V, 50% Idss.
Typical Parameters
Parameter
Units
Typical
Frequency MHz
900
1900
S21 dB
19.0
16.0
S11
dB
-10.7
-12.3
S22
dB
-9.7
-17.2
Output IP3
dBm
+38.0
+33.6
Output P1dB
dBm
+18.8
+19.1
Noise Figure
dB
2.7
3.1
Drain Bias Supply
5 V @ 140 mA
Gate Bias
0 V
Typical parameters reflect performance in an application circuit.
Actual Size
Specifications and information are subject to change without notice.
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
April 2004
OIP3 vs. Frequency
0
10
20
30
40
50
OIP3 (dBm)
0 .5 1 1.5 2 2.5 3
Frequency (GHz)
Gain vs. Temperature
5V 100% Idss
3.3V 50% Idss
11
13
15
19
21
23
Gain(dB)
NF vs. Frequency
0
1
2
3
4
5
0 .5 1 1.5 2 2.5 3
Frequency (GHz)
Frequency (GHz)
17
0 .5 1 1.5 2 2.5 3
Gain at +22C
Gain at -40C
5V, 100% Idss
Gain at +85C
NF (dB)
5V, 100% Idss
3.3V 50% Idss
OIP3 vs. Temperature
30
35
40
45
50
-40 -20 0 20 40 60 80 100
OIP3 (dBm)
Temperature (C)
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18
OIP3 (dBm)
Output Power (dBm)
5V, 100% Idss
OIP3 vs. Power Out
S-Parameters
S11 and S22
2.05
2.05
S22
0.05
S11
0.05
10
5
10
6
10
7
10
8
10
9
50 75 100 125 150 175 200
MTBF vs. Temperature
MTBF (hours)
Temperature (C)
Ground Tab
Junction
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85C
Thermal Resistance (Maximum)
59C/W
Junction Temperature
+160C
(Recommended Maximum)
Notes:
1. Thermal Resistance determined at Maximum Tab Temperature and Maximum Power
Dissipation.
2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours.
FH101
High Dynamic Range FET
Product Information
The Communications Edge
TM
Specifications and information are subject to change without notice.
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
April 2004
Outline Drawing
Land Pattern
Mounting Configuration
1
'XXXX' = Part Designation = 'FH1' for FH101
'XXXX' = Part Designation = 'FH1G' for FH101-G
'1' = Lasermark
'XXXX-X' = Lot Code
XXXX-X
XXXX
Specifications and information are subject to change without notice.
FH101
High Dynamic Range FET
Product Information
The Communications Edge
TM
ESD / MSL Information
ESD Classification: Class 1B
Value: Passes at 600 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Classification: Class IV
Value: Passes at 1000 V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
FH101
MSL Rating: Level 3 at +225C convection reflow
Standard: JEDEC Standard J-STD-020
FH101-G
MSL Rating: Level 3 at +260C convection reflow
Standard: JEDEC Standard J-STD-020
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
April 2004
Typical Test Data
S-Parameters (Vds = +5 V, 100% Idss, T = 22C, de-embedded into package device in a 50 ohm system)
Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value
0.05
0.997
-3.940
19.789
9.760
175.000
0.002
97.900
0.502
-6.360
0.0004
0.30
0.993
-22.800
19.370
9.300
162.000
0.015
76.000
0.492
-15.200 0.0570
0.55
0.968
-42.900
19.133
9.050
147.000
0.027
66.100
0.455
-26.300 0.1303
0.80
0.928
-62.100
18.639
8.550
133.000
0.037
54.400
0.424
-36.400 0.2302
1.05
0.905
-79.100
18.116
8.050
121.000
0.046
45.800
0.398
-47.300 0.2490
1.30
0.868
-95.800
17.478
7.480
109.000
0.053
35.500
0.361
-56.700 0.3267
1.55
0.841
-111.000
16.852
6.960
97.500
0.059
27.400
0.329
-66.400 0.3761
1.80
0.815
-126.000
16.191
6.450
86.900
0.063
20.100
0.308
-75.000 0.4231
2.05
0.780
-142.000
15.519
5.970
76.800
0.068
13.400
0.296
-81.500 0.4842
2.30
0.766
-155.000
14.901
5.560
67.300
0.071
6.700
0.268
-89.400 0.5293
2.55
0.754
-168.000
14.253
5.160
58.300
0.073
0.425
0.240
-96.100 0.5844
2.80
0.754
-180.000
13.679
4.830
49.600
0.074
-5.810
0.216
-103.000 0.6190
3.05
0.748
169.000
13.103
4.520
41.200
0.075
-12.300
0.191
-110.000 0.6719
S-Parameters (Vds = +3.3 V, 50% Idss, T = 22C, de-embedded into package device in a 50 ohm system)
Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value
0.05
0.998
-3.580
18.900
8.810
176.000
0.002
105.000
0.387
-3.780
-0.0299
0.30
0.994
-21.200
18.700
8.610
163.000
0.016
78.500
0.392
-16.300
0.0449
0.55
0.973
-39.900
18.547
8.460
149.000
0.030
66.900
0.360
-29.600
0.1249
0.80
0.935
-58.000
18.105
8.040
136.000
0.042
55.800
0.337
-42.100
0.2164
1.05
0.915
-74.200
17.696
7.670
123.000
0.052
46.900
0.317
-55.600
0.2394
1.30
0.880
-90.300
17.122
7.180
112.000
0.061
37.200
0.285
-67.900
0.3035
1.55
0.853
-105.000
16.547
6.720
100.000
0.068
28.700
0.259
-81.000
0.3513
1.80
0.826
-120.000
15.959
6.280
89.900
0.073
20.800
0.250
-93.100
0.3876
2.05
0.788
-136.000
15.402
5.890
79.700
0.080
14.000
0.236
-102.000 0.4513
2.30
0.772
-150.000
14.807
5.500
70.000
0.083
6.160
0.215
-115.000 0.4923
2.55
0.757
-163.000
14.185
5.120
60.800
0.087
-0.455
0.189
-126.000 0.5445
2.80
0.755
-175.000
13.625
4.800
52.000
0.089
-6.810
0.169
-138.000 0.5746
3.05
0.747
174.000
13.064
4.500
43.400
0.090
-13.400
0.150
-152.000 0.6242
FH101
High Dynamic Range FET
Product Information
The Communications Edge
TM
Specifications and information are subject to change without notice.
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